20240026563. COMPOUND INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTH simplified abstract (SLT Technologies, Inc.)

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COMPOUND INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTH

Organization Name

SLT Technologies, Inc.

Inventor(s)

Mark P. D'evelyn of Vancouver WA (US)

Paul M. Von Dollen of Brush Prairie WA (US)

COMPOUND INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTH - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240026563 titled 'COMPOUND INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTH

Simplified Explanation

The disclosed patent application describes a crystal growth apparatus that includes a cylindrical-shaped enclosure with a primary liner inside it. The primary liner has a cylindrical wall that extends between a first end and a second end, and its interior surface defines an interior region. There is at least one load-bearing annular insulating member between the cylindrical-shaped enclosure and the primary liner. Additionally, a plurality of heating elements are placed between the primary liner and the load-bearing insulating member. The apparatus also includes an end closure member near the first end of the enclosure and a primary liner lid near the first end of the primary liner's cylindrical wall.

  • The load-bearing annular insulating member can be made of a packed-bed ceramic composition or a perforated metal member.
  • The packed-bed ceramic composition has a density between about 30% and 98% of the theoretical density of a 100% dense ceramic with the same composition.
  • The perforated metal member can be a perforated metal foil or a plurality of perforated metal plates.
  • The perforations in the metal member have a percent open area between about 25% and 90%, and their diameter ranges from about 1 millimeter to 25 millimeters.

Potential applications of this technology:

  • Crystal growth for various industries such as electronics, optics, and materials science.
  • Production of high-quality crystals for semiconductors, lasers, and other electronic devices.
  • Research and development of new materials with specific crystal structures.

Problems solved by this technology:

  • Provides a controlled and optimized environment for crystal growth.
  • Enhances thermal insulation to maintain stable temperature conditions.
  • Improves the efficiency and uniformity of crystal growth processes.

Benefits of this technology:

  • Enables the growth of large and high-quality crystals.
  • Enhances the reproducibility and reliability of crystal growth experiments.
  • Reduces energy consumption and operating costs.
  • Facilitates the development of advanced materials and technologies.


Original Abstract Submitted

embodiments of the disclosure include a crystal growth apparatus, comprising a cylindrical-shaped enclosure, a primary liner disposed within the cylindrical-shaped enclosure, wherein the primary liner comprises a cylindrical wall that extends between a first end and a second end, and an interior surface of the primary liner defines an interior region, at least one load-bearing annular insulating member disposed between the cylindrical-shaped enclosure and the primary liner, a plurality of heating elements disposed between the primary liner and the at least one load-bearing annular insulating member, at least one end closure member disposed proximate to a first end of the cylindrical-shaped enclosure, and a primary liner lid disposed proximate to the first end of the cylindrical wall of the primary liner. the at least one load-bearing annular insulating member comprising at least one of a packed-bed ceramic composition, the packed-bed ceramic composition having a density that is between about 30% and about 98% of a theoretical density of a 100%-dense ceramic having the same composition, or a perforated metal member, comprising a perforated metal foil or a plurality of perforated metal plates, wherein the perforations have a percent open area between about 25% and about 90%, and the perforations have a diameter between about 1 millimeter and about 25 millimeters.

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