20240023461. QUANTUM INFORMATION PROCESSING DEVICE FORMATION simplified abstract (GOOGLE LLC)

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QUANTUM INFORMATION PROCESSING DEVICE FORMATION

Organization Name

GOOGLE LLC

Inventor(s)

Anthony Edward Megrant of Goleta CA (US)

QUANTUM INFORMATION PROCESSING DEVICE FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240023461 titled 'QUANTUM INFORMATION PROCESSING DEVICE FORMATION

Simplified Explanation

The abstract describes a method for forming a quantum information processing device. Here is a simplified explanation of the patent application:

  • A first electrically-conductive layer is provided on a substrate.
  • A layer of dielectric material is deposited on the first electrically-conductive layer.
  • The layer of dielectric material is patterned to form a pad of dielectric material and reveal a first region of the first electrically-conductive layer.
  • A second electrically-conductive layer is deposited on the pad of dielectric material and the first region of the first electrically-conductive layer.
  • The second electrically-conductive layer is patterned.
  • The pad of dielectric material is removed using isotropic gas phase etching.

Potential Applications of this Technology:

  • Quantum computing: The formed quantum information processing device can be used in quantum computing systems.
  • Quantum communication: The device can be utilized in quantum communication systems for secure transmission of information.
  • Quantum sensing: The technology can be applied in quantum sensors for high-precision measurements.

Problems Solved by this Technology:

  • Fabrication challenges: The method provides a solution for forming a quantum information processing device by overcoming fabrication challenges.
  • Integration issues: The technology addresses integration issues in the manufacturing process of quantum devices.

Benefits of this Technology:

  • Improved device performance: The method allows for the formation of high-performance quantum information processing devices.
  • Enhanced scalability: The technology enables the fabrication of scalable quantum devices.
  • Cost-effective manufacturing: The method offers a cost-effective approach for producing quantum information processing devices.


Original Abstract Submitted

a method for forming at least part of a quantum information processing device is presented. the method includes providing a first electrically-conductive layer formed of a first electrically-conductive material on a principal surface of a substrate, depositing a layer of dielectric material on the first electrically-conductive material, patterning the layer of dielectric material to form a pad of dielectric material and to reveal a first region of the first electrically-conductive layer, depositing a second electrically-conductive layer on the pad of dielectric material and on the first region of the first electrically-conductive layer, patterning the second electrically-conductive layer and removing the pad of dielectric material using isotropic gas phase etching.