20240021644. TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Cheng Yu Huang of Hsinchu (TW)

Chun-Hao Chuang of Hsinchu City (TW)

Keng-Yu Chou of Kaohsiung City (TW)

Wei-Chieh Chiang of Yuanlin Township (TW)

Chin-Chia Kuo of Tainan City (TW)

Wen-Hau Wu of New Taipei City (TW)

Hua-Mao Chen of Tainan City (TW)

Chih-Kung Chang of Zhudong Township (TW)

TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240021644 titled 'TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS

Simplified Explanation

The present disclosure relates to an image sensor and a method for forming the image sensor. In some embodiments, the image sensor includes an array of pixels and an inter-pixel trench isolation structure. The inter-pixel trench isolation structure is defined by a low-transmission layer and extends along the boundaries of the pixels, individually surrounding the photodetectors to separate them from each other.

• The image sensor comprises an array of pixels with individual photodetectors on a substrate.
• The inter-pixel trench isolation structure is defined by a low-transmission layer.
• The low-transmission layer, which may be made of metal or other suitable materials, surrounds the photodetectors and separates them from each other.
• The inter-pixel trench isolation structure has low transmission for incident radiation.

Potential applications of this technology:

• Image sensors in digital cameras, smartphones, and other electronic devices.
• Medical imaging devices.
• Surveillance cameras and security systems.
• Automotive cameras for advanced driver assistance systems (ADAS) and autonomous vehicles.

Problems solved by this technology:

• Reduces crosstalk between adjacent pixels in an image sensor, improving image quality.
• Enhances the sensitivity and accuracy of photodetectors by isolating them from each other.
• Minimizes interference from external light sources, resulting in better signal-to-noise ratio.

Benefits of this technology:

• Improved image quality and resolution.
• Higher sensitivity and accuracy in capturing light.
• Enhanced performance in low-light conditions.
• Reduction in image artifacts and noise.
• Increased reliability and durability of image sensors.

Original Abstract Submitted

various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. in some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. the array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. the inter-pixel trench isolation structure is in the substrate. further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. the inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. the low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).