20240021643. COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Wei Chuang Wu of Tainan City (TW)

Dun-Nian Yaung of Taipei City (TW)

Feng-Chi Hung of Chu-Bei City (TW)

Jen-Cheng Liu of Hsin-Chu City (TW)

Jhy-Jyi Sze of Hsin-Chu City (TW)

Keng-Yu Chou of Kaohsiung City (TW)

Yen-Ting Chiang of Tainan City (TW)

Ming-Hsien Yang of Taichung City (TW)

Chun-Yuan Chen of Tainan City (TW)

COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240021643 titled 'COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The present patent application is directed towards image sensors with composite backside illuminated (CBSI) structures that enhance performance. In some embodiments, the structure includes a first trench isolation structure that extends into the backside of a substrate and comprises a pair of first trench isolation segments. A photodetector is located in the substrate, between and bordering the first trench isolation segments. A second trench isolation structure is positioned between the first trench isolation segments and extends into the backside of the substrate to a depth less than the first depth. The second trench isolation structure comprises a pair of second trench isolation segments. An absorption enhancement structure is placed over the photodetector, between the second trench isolation segments, and is recessed into the backside of the semiconductor substrate. The absorption enhancement structure and the second trench isolation structure collectively define a CBSI structure.

• The patent application describes a composite backside illuminated (CBSI) structure for image sensors.
• The CBSI structure includes a first trench isolation structure with two segments and a second trench isolation structure with two segments.
• A photodetector is located in the substrate between the first trench isolation segments.
• The second trench isolation structure is positioned between the first trench isolation segments and is shallower than the first trench isolation structure.
• An absorption enhancement structure is placed over the photodetector and recessed into the backside of the substrate.
• The absorption enhancement structure and the second trench isolation structure together define the CBSI structure.

Potential applications of this technology:

• Improved performance of image sensors in various devices such as smartphones, digital cameras, and surveillance systems.
• Enhanced image quality and sensitivity in low-light conditions.
• Increased pixel density and resolution in image sensors.

Problems solved by this technology:

• Reduces crosstalk between pixels in image sensors, leading to improved image quality.
• Enhances light absorption by the photodetector, resulting in higher sensitivity and better performance in low-light environments.
• Provides better isolation between pixels, reducing interference and improving overall image sensor performance.

Benefits of this technology:

• Improved image quality and sensitivity in various lighting conditions.
• Higher pixel density and resolution, leading to sharper and more detailed images.
• Enhanced performance of image sensors in low-light environments, enabling better photography and surveillance capabilities.

Original Abstract Submitted

various embodiments of the present application are directed towards image sensors including composite backside illuminated (cbsi) structures to enhance performance. in some embodiments, a first trench isolation structure extends into a backside of a substrate to a first depth and comprises a pair of first trench isolation segments. a photodetector is in the substrate, between and bordering the first trench isolation segments. a second trench isolation structure is between the first trench isolation segments and extends into the backside of the substrate to a second depth less than the first depth. the second trench isolation structure comprises a pair of second trench isolation segments. an absorption enhancement structure overlies the photodetector, between the second trench isolation segments, and is recessed into the backside of the semiconductor substrate. the absorption enhancement structure and the second trench isolation structure collectively define a cbsi structure.