20240021642. ENHANCED TRENCH ISOLATION STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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ENHANCED TRENCH ISOLATION STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Min-Ying Tsai of Kaohsiung City (TW)

Cheng-Te Lee of Chupei City (TW)

Rei-Lin Chu of Hsinchu City (TW)

Ching I Li of Tainan (TW)

Chung-Yi Yu of Hsin-Chu (TW)

ENHANCED TRENCH ISOLATION STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240021642 titled 'ENHANCED TRENCH ISOLATION STRUCTURE

Simplified Explanation

The present disclosure is about an image sensor that includes a substrate with a photodetector. The substrate also has a trench defined by sidewalls and an upper surface. A first isolation layer made of a first dielectric material extends along the sidewalls and upper surface of the substrate that define the trench. A second isolation layer made of a second dielectric material is over the first isolation layer and lines it. A third isolation layer made of a third material is over the second isolation layer, fills the trench, and lines the second isolation layer. The ratio of the first thickness of the first isolation layer to the second thickness of the second isolation layer is about 0.17 to 0.38.

  • The patent application describes an image sensor with improved isolation layers in the substrate.
  • The image sensor includes multiple isolation layers made of different dielectric materials.
  • The ratio of the thicknesses of the first and second isolation layers is specified.
  • The technology aims to enhance the performance and functionality of image sensors.

Potential Applications

  • This technology can be applied in various imaging devices, such as digital cameras, smartphones, and surveillance systems.
  • It can improve the image quality and sensitivity of image sensors, leading to better overall performance in capturing images and videos.

Problems Solved

  • The technology addresses the issue of isolation between components in an image sensor.
  • It provides better isolation between the photodetector and other components, reducing crosstalk and interference.
  • The use of multiple isolation layers with different dielectric materials enhances the isolation capabilities of the image sensor.

Benefits

  • Improved image quality and sensitivity due to reduced interference and crosstalk.
  • Enhanced performance and functionality of image sensors.
  • Increased reliability and durability of image sensors.
  • Potential for smaller and more compact image sensor designs.


Original Abstract Submitted

the present disclosure relates to an image sensor comprising a substrate. a photodetector is in the substrate. a trench is in the substrate and is defined by sidewalls and an upper surface of the substrate. a first isolation layer extends along the sidewalls and the upper surface of the substrate that define the trench. the first isolation layer comprises a first dielectric material. a second isolation layer is over the first isolation layer. the second isolation layer lines the first isolation layer. the second isolation layer comprises a second dielectric material. a third isolation layer is over the second isolation layer. the third isolation layer fills the trench and lines the second isolation layer. the third isolation layer comprises a third material. a ratio of a first thickness of the first isolation layer to a second thickness of the second isolation layer is about 0.17 to 0.38.

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