20240021411. VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA simplified abstract (Ascentool, Inc.)

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VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA

Organization Name

Ascentool, Inc.

Inventor(s)

George Xinsheng Guo of Palo Alto CA (US)

VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240021411 titled 'VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA

Simplified Explanation

The abstract describes a plasma deposition apparatus that utilizes a first plasma source to produce a plasma confined in a magnetic field. The apparatus includes a gas distribution device, a closed-loop electrode, and one or more magnets. The gas distribution device supplies gas, while the closed-loop electrode defines a central region and has one or more magnets outside its inner surface. The magnets generate the magnetic field in the central region, and together with the closed-loop electrode, produce a first plasma consisting of activated atoms, molecules, electrons, and ions from the gas. The apparatus also includes a collimator that collimates the activated particles and directs the ions towards a substrate.

  • The apparatus includes a first plasma source that produces a plasma confined in a magnetic field.
  • A gas distribution device supplies gas to the apparatus.
  • A closed-loop electrode with one or more magnets outside its inner surface defines a central region.
  • The magnets generate a magnetic field in the central region.
  • The closed-loop electrode and magnets produce a first plasma consisting of activated atoms, molecules, electrons, and ions from the gas.
  • A collimator is used to collimate and direct the ions towards a substrate.

Potential Applications:

  • Thin film deposition: The plasma deposition apparatus can be used for depositing thin films on substrates, allowing for the creation of various functional coatings.
  • Semiconductor manufacturing: The technology can be applied in the fabrication of semiconductor devices, such as integrated circuits and transistors.
  • Surface modification: The apparatus can be utilized for modifying the surface properties of materials, enhancing their performance or introducing specific functionalities.

Problems Solved:

  • Controlled plasma confinement: The use of a magnetic field and closed-loop electrode allows for the confinement of the plasma, ensuring a more controlled and stable plasma environment.
  • Efficient ion deposition: The collimator enables the directed deposition of ions onto a substrate, improving the efficiency and accuracy of the deposition process.
  • Enhanced plasma activation: The combination of the closed-loop electrode and magnets enhances the activation of atoms, molecules, electrons, and ions in the plasma, leading to improved deposition quality.

Benefits:

  • Improved deposition control: The apparatus provides better control over the deposition process, resulting in more precise and uniform thin film coatings.
  • Higher deposition efficiency: The collimator ensures a higher percentage of ions reach the substrate, increasing the deposition efficiency and reducing material waste.
  • Enhanced plasma activation: The technology enhances the activation of particles in the plasma, leading to improved film properties and performance.


Original Abstract Submitted

a plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. the one or more magnets can produce the magnetic field in the center region. the closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. a collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.

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