20240021408. METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM simplified abstract (Lam Research Corporation)

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METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM

Organization Name

Lam Research Corporation

Inventor(s)

John C. Valcore, Jr. of Worthington OH (US)

Bradford J. Lyndaker of Lowville NY (US)

METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240021408 titled 'METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM

Simplified Explanation

Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The patent describes a system where a base radio frequency (RF) signal pulses between a high power level and a low power level. Additionally, non-base RF generators, responsive to a control signal, proactively switch between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, the non-base RF generators can also switch between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. The patent also discloses techniques for determining the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals in advance of production time.

  • The patent describes a method for processing a substrate in a multi-frequency plasma processing chamber.
  • The base RF signal pulses between high and low power levels.
  • Non-base RF generators switch between predefined power levels or RF frequencies in response to a control signal.
  • Techniques are disclosed for determining the predefined power levels and RF frequencies in advance.

Potential applications of this technology:

  • Semiconductor manufacturing: The disclosed methods and apparatus can be used in the fabrication of semiconductor devices, where precise control of plasma processing parameters is crucial.
  • Thin film deposition: The ability to switch between different power levels and RF frequencies can enhance the deposition process for thin films, allowing for improved film quality and uniformity.
  • Surface modification: The multi-frequency plasma processing chamber can be utilized for surface modification of various materials, such as improving adhesion properties or introducing specific functional groups.

Problems solved by this technology:

  • Enhanced process control: The ability to switch between different power levels and RF frequencies allows for more precise control over the plasma processing parameters, leading to improved process repeatability and yield.
  • Improved uniformity: By proactively switching between power levels or RF frequencies, the patent addresses issues related to non-uniform plasma distribution, resulting in improved substrate uniformity during processing.

Benefits of this technology:

  • Increased process flexibility: The ability to switch between different power levels and RF frequencies provides flexibility in tailoring the plasma processing conditions to specific requirements, enabling a wider range of applications.
  • Enhanced process efficiency: The disclosed methods and apparatus optimize the use of power and RF frequencies, resulting in improved process efficiency and reduced energy consumption.
  • Improved product quality: The precise control over plasma processing parameters leads to improved product quality, with reduced defects and enhanced performance characteristics.


Original Abstract Submitted

methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. the base rf signal pulses between a high power level and a low power level. each of the non-base rf generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base rf signal pulses. alternatively or additionally, each of the non-base rf generators, responsive to a control signal, proactively switches between a first predefined rf frequency and a second predefined rf frequency as the base rf signal pulses. techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined rf frequencies for the non-base rf signals.

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