20240020000. METHOD AND SYSTEM FOR TUNING A MEMORY DEVICE FOR HIGH-SPEED TRANSITIONS simplified abstract (Samsung Electronics Co., Ltd.)

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METHOD AND SYSTEM FOR TUNING A MEMORY DEVICE FOR HIGH-SPEED TRANSITIONS

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Shankar Athanikar of Bengaluru (IN)

Akhilesh Kumar Jaiswal of Bengaluru (IN)

Puneet Kukreja of Bengaluru (IN)

Sumeet Paul of Bengaluru (IN)

Vinay Kumar M N of Bengaluru (IN)

METHOD AND SYSTEM FOR TUNING A MEMORY DEVICE FOR HIGH-SPEED TRANSITIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240020000 titled 'METHOD AND SYSTEM FOR TUNING A MEMORY DEVICE FOR HIGH-SPEED TRANSITIONS

Simplified Explanation

The present disclosure is about a method and system for tuning a memory device to achieve high-speed transitions. If the bus sampling tuning of the memory device fails with default tuning parameters, the host device sends an auto-tuning request to the memory device until certain conditions are met. The memory device receives the auto-tuning request, selects a set of tuning parameters from multiple sets, and transmits a tuning block to the host device based on the selected parameters until the conditions are satisfied. This allows the memory device to operate in high-speed mode and enables fast transitions between the host and memory devices, while also avoiding initialization failures.

  • The patent/application is about a method and system for tuning a memory device for high-speed transitions.
  • If default tuning parameters fail, the host device sends an auto-tuning request to the memory device.
  • The memory device selects a set of tuning parameters from multiple sets and transmits a tuning block to the host device based on the selected parameters.
  • This process continues until certain conditions are satisfied.
  • The memory device can then operate in high-speed mode, achieving fast transitions between the host and memory devices.
  • Initialization failures of the memory device can be avoided.

Potential Applications

  • High-speed data transfer between host devices and memory devices.
  • Improving the performance of memory devices in various applications, such as computer systems, mobile devices, and data centers.
  • Enhancing the efficiency of data processing and storage systems.

Problems Solved

  • Failure of bus sampling tuning in memory devices.
  • Initialization failures of memory devices.
  • Slow transitions and data transfer speeds between host and memory devices.

Benefits

  • Enables high-speed mode in memory devices.
  • Achieves fast transitions between host and memory devices.
  • Improves the overall performance and efficiency of data processing and storage systems.
  • Avoids initialization failures, ensuring reliable operation of memory devices.


Original Abstract Submitted

the present disclosure relates to a method and system for tuning a memory device for high-speed transitions. upon failure of bus sampling tuning of a memory device with default tuning parameters, the host device is configured to transmit an auto-tuning request to the memory device for until one or more pre-defined conditions are satisfied. the memory device is configured to receive the auto-tuning request from the host device, selects a set of tuning parameters from a plurality of sets of tuning parameters, and transmits a tuning block to the host device based on the selected set of tuning parameters, until one or more pre-defined conditions are satisfied. thereby, the memory device can utilize high-speed mode and high-speed transitions can be achieved between host and memory devices. thus, initialization failure of the memory device can also be avoided.