20240016044. Semiconductor Device And Manufacturing Method Thereof simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)

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Semiconductor Device And Manufacturing Method Thereof

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Hideaki Kuwabara of Isehara (JP)

Hideto Ohnuma of Atsugi (JP)

Semiconductor Device And Manufacturing Method Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240016044 titled 'Semiconductor Device And Manufacturing Method Thereof

Simplified Explanation

The abstract of the patent application describes a method to address issues related to defects in the mask used during evaporation in the display region. It proposes the formation of a partition with different thicknesses over a pixel electrode using a photomask or reticle with an auxiliary pattern that reduces light intensity.

  • The patent application proposes a method to form a partition with different thicknesses over a pixel electrode in a display region.
  • The partition is formed using a photomask or reticle with an auxiliary pattern that reduces light intensity.
  • The auxiliary pattern can be a diffraction grating pattern or a semi-transmissive film.
  • The method aims to improve definition and increase the substrate size without increasing the number of steps.
  • The proposed solution addresses issues related to defects caused by precision, bending, and other factors in the mask used during evaporation.

Potential Applications:

  • This technology can be applied in the manufacturing of displays, such as LCDs or OLEDs.
  • It can be used to improve the definition and increase the substrate size in display panels, resulting in enhanced image quality.

Problems Solved:

  • The method addresses defects caused by precision, bending, and other factors in the mask used during evaporation.
  • It overcomes issues related to miniaturization of pixel regions and the associated decrease in definition.
  • The partition formation technique helps to increase the substrate size without adding extra steps in the manufacturing process.

Benefits:

  • Improved definition and increased substrate size lead to enhanced image quality in displays.
  • The method allows for the formation of partitions with different thicknesses without increasing the complexity of the manufacturing process.
  • By reducing defects caused by the mask, the technology helps to improve the overall yield and reliability of display panels.


Original Abstract Submitted

as a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. a partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.