20240015970. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Woosung Yang of Gwangmyeong-si (KR)
JOONHEE Lee of Seongnam-si (KR)
JOON-SUNG Lim of Seongnam-si (KR)
EUNTAEK Jung of Seongnam-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240015970 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The disclosed patent application describes a semiconductor memory device that includes multiple layers and structures for improved performance and functionality. Here is a simplified explanation of the abstract:
- The semiconductor memory device consists of a first substrate and a second substrate, with a lower semiconductor layer and an upper semiconductor layer on the first substrate.
- On top of the upper semiconductor layer, there is an electrode structure composed of multiple stacked electrodes.
- A vertical channel structure is present, which penetrates the electrode structure and connects to the second substrate.
- An interlayer dielectric layer covers the electrode structure, providing insulation.
- A cutting structure is included, which penetrates both the interlayer dielectric layer and the upper semiconductor layer.
- The cutting structure defines a first sidewall on the upper semiconductor layer.
- The lower semiconductor layer has a second sidewall adjacent to the first sidewall.
- The first sidewall and the second sidewall are horizontally offset from each other.
Potential applications of this technology:
- Memory devices: The semiconductor memory device can be used in various memory applications, such as computer systems, smartphones, and other electronic devices.
- Data storage: The improved performance and functionality of the device can enhance data storage capabilities, allowing for larger and faster storage capacities.
- Integrated circuits: The device can be integrated into complex integrated circuits, enabling advanced functionality in electronic systems.
Problems solved by this technology:
- Improved performance: The multiple layers and structures in the device enhance its performance, including faster data access and higher storage capacities.
- Space efficiency: The vertical channel structure and stacked electrodes allow for a more compact design, saving space in electronic devices.
- Enhanced reliability: The cutting structure and offset sidewalls provide better insulation and reduce the risk of electrical interference or leakage.
Benefits of this technology:
- Higher memory capacity: The device's improved design allows for larger memory capacities, accommodating the increasing demand for data storage.
- Faster data access: The enhanced performance of the device enables faster data retrieval and processing, improving overall system speed.
- Space-saving design: The compact design of the device saves valuable space in electronic devices, allowing for more efficient and smaller form factors.
Original Abstract Submitted
disclosed is a semiconductor memory device comprising a second substrate on a first substrate and including a lower semiconductor layer and an upper semiconductor layer on the lower semiconductor layer, an electrode structure on the upper semiconductor layer and including a plurality of stacked electrodes, a vertical channel structure that penetrates the electrode structure and is connected to the second substrate, an interlayer dielectric layer that covers the electrode structure, and a cutting structure that penetrates the interlayer dielectric layer and the upper semiconductor layer. the upper semiconductor layer has a first sidewall defined by the cutting structure. the lower semiconductor layer has a second sidewall adjacent to the first sidewall. the first sidewall and the second sidewall are horizontally offset from each other.
