20240014254. TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ting-Chen Hsu of Taichung City (TW)

Hsin-Li Cheng of Hsin Chu (TW)

Jyun-Ying Lin of Wujie Township (TW)

Yingkit Felix Tsui of Cupertino CA (US)

Shu-Hui Su of Tucheng City (TW)

Shi-Min Wu of Changhua County (TW)

TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240014254 titled 'TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE

Simplified Explanation

The present application is directed towards an integrated chip (IC) that includes a trench capacitor overlying a substrate. The trench capacitor consists of multiple capacitor electrode structures, warping reduction structures, and capacitor dielectric structures. These structures are stacked alternately and define a vertical trench segment in the substrate. The capacitor electrode structures are composed of a metal component and a nitrogen component, while the warping reduction structures include the metal component, the nitrogen component, and an oxygen component.

• The patent application describes an integrated chip (IC) with a trench capacitor that is built on top of a substrate.
• The trench capacitor is made up of multiple capacitor electrode structures, warping reduction structures, and capacitor dielectric structures.
• These structures are stacked in an alternating pattern and form a vertical trench segment within the substrate.
• The capacitor electrode structures consist of a combination of metal and nitrogen components.
• The warping reduction structures include metal, nitrogen, and oxygen components.

Potential Applications:

• This technology can be applied in the field of semiconductor manufacturing for the production of integrated chips.
• It can be used in various electronic devices that require high-capacity capacitors, such as smartphones, tablets, and computers.
• The trench capacitor design can improve the performance and efficiency of these electronic devices.

Problems Solved:

• The integration of capacitor electrode structures, warping reduction structures, and capacitor dielectric structures in a trench capacitor design addresses the need for compact and efficient capacitors in integrated chips.
• The alternating stacking of these structures helps reduce warping and distortion, which can affect the performance and reliability of the IC.

Benefits:

• The trench capacitor design allows for higher capacitance in a smaller footprint, enabling more efficient use of space in integrated chips.
• The combination of metal, nitrogen, and oxygen components in the capacitor electrode and warping reduction structures enhances the performance and stability of the IC.
• The improved design and construction of the trench capacitor can lead to enhanced functionality and reliability of electronic devices.

Original Abstract Submitted

various embodiments of the present application are directed towards an integrated chip (ic). the ic comprises a trench capacitor overlying a substrate. the trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. the plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. the plurality of capacitor electrode structures comprise a metal component and a nitrogen component. the plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.