20240014235. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Yun Ki Lee of Hwaseong-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240014235 titled 'IMAGE SENSOR
Simplified Explanation
The abstract describes an image sensor that consists of a semiconductor layer with two sections, each having a surface facing each other. The semiconductor layer includes a device isolation layer that defines multiple pixels. On the first section of the semiconductor layer, there is a first grid pattern, and on the second section, there is a light-shield pattern. The top surface of the first grid pattern is at a lower level than the top surface of the light-shield pattern, and these levels are defined with respect to the first surface of the semiconductor layer.
- The patent application describes an image sensor with a unique arrangement of grid patterns and light-shield patterns on different sections of the semiconductor layer.
- The first grid pattern and light-shield pattern are positioned at different levels, allowing for improved light sensitivity and isolation of pixels.
- The device isolation layer helps define individual pixels on the sensor.
- The arrangement of patterns and layers in the image sensor enhances its performance and image quality.
Potential Applications
- Digital cameras
- Mobile devices with built-in cameras
- Surveillance systems
- Medical imaging devices
Problems Solved
- Improved light sensitivity and isolation of pixels
- Enhanced image quality and performance of image sensors
- Reduction of cross-talk between pixels
Benefits
- Higher quality images with improved color accuracy and sharpness
- Increased sensitivity to light, allowing for better low-light photography
- Reduction of noise and interference in captured images
- Enhanced performance and efficiency of image sensors
Original Abstract Submitted
an image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other, a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. a top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.
