20240014105. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yung-Sheng Lin of Hsinchu County (TW)

Cheng-Lung Yang of Kaohsiung City (TW)

Chin-Yu Ku of Hsinchu City (TW)

Ming-Da Cheng of Taoyuan City (TW)

Wen-Hsiung Lu of Tainan City (TW)

Tang-Wei Huang of Hsinchu (TW)

Fu Wei Liu of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240014105 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The abstract describes a semiconductor device and a method of forming the device. The device includes a substrate with a cavity partially defined by an inner sidewall and a channel at the bottom. The channel penetrates through the substrate. An interconnection structure is placed over the substrate and has a through hole that penetrates through it. The through hole, cavity, and channel are in spatial communication with each other.

• The semiconductor device includes a substrate with a cavity and a channel, allowing for spatial communication between them.
• An interconnection structure is placed over the substrate, providing a through hole that penetrates through it.
• The through hole, cavity, and channel are all connected, allowing for communication between them.

Potential applications of this technology:

• Integrated circuits: The spatial communication between the cavity, channel, and through hole can be utilized for improved circuit design and functionality.
• Microelectronics: The interconnection structure and spatial communication can enhance the performance and efficiency of microelectronic devices.
• Sensor devices: The cavity and channel can be utilized for sensing applications, while the interconnection structure allows for integration with other components.

Problems solved by this technology:

• Improved communication: The spatial communication between the cavity, channel, and through hole enables better communication and functionality within the semiconductor device.
• Enhanced integration: The interconnection structure allows for seamless integration of the device with other components, improving overall performance.

Benefits of this technology:

• Increased functionality: The spatial communication between different parts of the device allows for enhanced functionality and versatility.
• Improved performance: The integration and communication capabilities provided by this technology can lead to improved performance and efficiency of semiconductor devices.
• Enhanced design flexibility: The presence of the cavity, channel, and through hole allows for more flexible and innovative design options in semiconductor devices.

Original Abstract Submitted

a semiconductor device and a method of forming the same are provided. the semiconductor device includes at least one substrate and an interconnection structure. the at least one substrate has a cavity partially defined by an inner sidewall of the at least one substrate and a channel disposed at a bottom of the at least one substrate. the channel laterally penetrates through the at least one substrate. the interconnections structure is disposed over the substrate, and the interconnection structure has a through hole penetrating through the interconnection structure. the through hole, the cavity and the channel are in spatial communication with each other.