20240014013. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD simplified abstract (Tokyo Electron Limited)

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PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Organization Name

Tokyo Electron Limited

Inventor(s)

Nobuo Matsuki of Yamanashi (JP)

Hiroyuki Matsuura of Iwate (JP)

Taro Ikeda of Yamanashi (JP)

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240014013 titled 'PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Simplified Explanation

The abstract of the patent application describes a plasma processing apparatus that includes a processing container with an opening in the sidewall. The opening is covered by a partition wall, which creates an internal space that communicates with the inside of the processing container. An internal electrode is inserted into the internal space and is supplied with RF power. There is a gap between the partition wall and the internal electrode.

  • The patent application describes a plasma processing apparatus with a unique design and configuration.
  • The apparatus includes a processing container with an opening in the sidewall, allowing for easy access.
  • A partition wall covers the opening and creates an internal space that communicates with the inside of the processing container.
  • An internal electrode is inserted into the internal space and is supplied with RF power.
  • The presence of a gap between the partition wall and the internal electrode allows for efficient plasma processing.

Potential applications of this technology:

  • Plasma etching: The apparatus can be used for precise and controlled etching of materials, such as in semiconductor manufacturing.
  • Surface modification: The plasma processing apparatus can be utilized for surface treatment and modification of various materials, improving their properties.
  • Thin film deposition: The apparatus can be employed for depositing thin films onto substrates, enabling the production of advanced electronic devices.

Problems solved by this technology:

  • Improved process control: The apparatus allows for precise control of plasma processing parameters, resulting in more accurate and consistent results.
  • Enhanced efficiency: The design of the apparatus ensures efficient plasma generation and distribution, leading to faster processing times.
  • Reduced contamination: The airtight insertion of the internal electrode minimizes the risk of contamination during plasma processing.

Benefits of this technology:

  • Higher productivity: The efficient and controlled plasma processing provided by the apparatus allows for increased productivity in various industries.
  • Improved product quality: The precise control and consistency of the plasma processing result in higher quality products with fewer defects.
  • Cost savings: The optimized design and efficient operation of the apparatus can lead to cost savings in terms of time, energy, and materials.


Original Abstract Submitted

a plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with rf power. a first gap is provided between the partition wall and the internal electrode.

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