20240011159. PE-CVD APPARATUS AND METHOD simplified abstract (SPTS Technologies Limited)
Contents
PE-CVD APPARATUS AND METHOD
Organization Name
Inventor(s)
Stephen Burgess of Newport (GB)
Kathrine Crook of Newport (GB)
Daniel Archard of Newport (GB)
Euan Alasdair Morrison of Newport (GB)
PE-CVD APPARATUS AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240011159 titled 'PE-CVD APPARATUS AND METHOD
Simplified Explanation
The abstract describes a capacitively coupled plasma enhanced chemical vapour deposition (PE-CVD) apparatus. The apparatus consists of a chamber, a first electrode with a substrate support, a second electrode with a gas inlet structure, and an RF power source connected to the gas inlet structure. The gas inlet structure has an edge region, a central region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both form part of the second electrode, and the central region is spaced apart from the substrate support to create a plasma dark space channel.
- The apparatus is a PE-CVD system used for depositing thin films on substrates.
- It utilizes a capacitively coupled plasma to enhance the chemical vapor deposition process.
- The first electrode with a substrate support holds the substrate in the chamber.
- The second electrode with a gas inlet structure supplies the precursor gas mixture to the chamber.
- The RF power source provides RF power to the gas inlet structure, facilitating the plasma generation.
- The gas inlet structure has an edge region and a central region, both forming part of the second electrode.
- The precursor gas inlets are located in the edge region, while the central region is spaced apart from the substrate support.
- The spacing between the central region and the substrate support creates a plasma dark space channel, which enhances the deposition process.
Potential Applications:
- Thin film deposition for semiconductor manufacturing.
- Coating of optical components.
- Surface modification of materials.
- Production of solar cells.
- Creation of protective coatings.
Problems Solved:
- Improved control and uniformity of thin film deposition.
- Enhanced plasma generation and stability.
- Reduction of unwanted side reactions.
- Minimization of substrate damage.
- Increased efficiency and productivity in the deposition process.
Benefits:
- Higher quality and more uniform thin films.
- Improved adhesion and durability of coatings.
- Enhanced control over film thickness and composition.
- Reduced production costs and material waste.
- Increased throughput and productivity in manufacturing processes.
Original Abstract Submitted
a capacitively coupled plasma enhanced chemical vapour deposition (pe-cvd) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an rf power source connected to the gas inlet structure for supplying rf power thereto. the gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a pe-cvd precursor gas mixture to the chamber. the edge region and the central region both constitute part of the second electrode. the precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.
