20240011150. METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF CARBON, METHOD OF FORMING A PATTERNED LAYER OF MATERIAL simplified abstract (ASML Netherlands B.V.)

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METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF CARBON, METHOD OF FORMING A PATTERNED LAYER OF MATERIAL

Organization Name

ASML Netherlands B.V.

Inventor(s)

Sonia Castellanos Ortega of Leiden (NL)

Jan Verhoeven of Kockengen (NL)

Joost Wilhelmus Maria Frenken of Leiden (NL)

Pavlo Antonov of Valkenburg (NL)

Nicolaas Ten Kate of Almkerk (NL)

Olivier Christian Maurice Lugier of Amsterdam (NL)

METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF CARBON, METHOD OF FORMING A PATTERNED LAYER OF MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240011150 titled 'METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF CARBON, METHOD OF FORMING A PATTERNED LAYER OF MATERIAL

Simplified Explanation

The patent application describes methods and apparatus for forming a patterned layer of carbon on a solid structure using extreme ultraviolet radiation and a carbon-containing precursor. The radiation interacts with the solid structure to cause the formation of a carbon layer in a selected portion, following the pattern defined by that portion.

  • The patent application describes a method for forming a patterned layer of carbon on a solid structure.
  • The method involves irradiating a selected portion of the solid structure's surface with extreme ultraviolet radiation.
  • A carbon-containing precursor is present during the irradiation process.
  • The interaction between the radiation and the solid structure in the selected portion leads to the formation of a carbon layer.
  • The carbon layer is formed in a pattern that corresponds to the selected portion of the solid structure.

Potential Applications:

  • Microelectronics: The patterned layer of carbon can be used in the fabrication of microelectronic devices, such as transistors and integrated circuits.
  • Nanotechnology: The carbon layer can be utilized in the development of nanoscale devices and structures.
  • Optics: The patterned carbon layer can be employed in optical devices, such as lenses and mirrors.

Problems Solved:

  • Precise patterning: The method allows for the formation of a carbon layer in a specific pattern, enabling precise control over the placement of carbon on the solid structure.
  • Carbon deposition: The use of extreme ultraviolet radiation and a carbon-containing precursor facilitates the deposition of carbon in a controlled manner, overcoming challenges associated with conventional carbon deposition techniques.

Benefits:

  • Enhanced device performance: The precise patterning of the carbon layer can improve the performance of microelectronic and nanoscale devices.
  • Simplified fabrication process: The method simplifies the process of forming patterned carbon layers, potentially reducing manufacturing costs and time.
  • Versatile applications: The patterned carbon layer can be utilized in various fields, including microelectronics, nanotechnology, and optics.


Original Abstract Submitted

methods and apparatus for forming a patterned layer of carbon are disclosed. in one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. the radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. the layer of carbon is formed in a pattern defined by the selected portion.

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