18545810. HIGH-K DIELECTRIC MATERIALS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES simplified abstract (Applied Materials, Inc.)

HIGH-K DIELECTRIC MATERIALS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES

Organization Name

Applied Materials, Inc.

Inventor(s)

Xiangxin Rui of Campbell CA (US)

Lai Zhao of Campbell CA (US)

Jrjyan Jerry Chen of Campbell CA (US)

Soo Young Choi of Fremont CA (US)

Yujia Zhai of Fremont CA (US)

HIGH-K DIELECTRIC MATERIALS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18545810 titled 'HIGH-K DIELECTRIC MATERIALS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES

Simplified Explanation

Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.

• Zirconium-containing dielectric layer with aluminum for high dielectric constant and low film current leakage.
• Thin film transistor structure with gate, source, and drain electrodes for display applications.

Potential Applications

The technology can be applied in:

• Display panels
• Touchscreen devices
• Flexible electronics

Problems Solved

• High dielectric constant needed for capacitor layers
• Low film current leakage required for optimal performance

Benefits

• Improved performance in display applications
• Enhanced durability and reliability
• Cost-effective manufacturing process

Potential Commercial Applications

Optimized for use in:

• Consumer electronics
• Medical devices
• Automotive displays

Possible Prior Art

One possible prior art could be the use of different dielectric materials in thin film transistor structures for display applications.

How does the zirconium-containing dielectric layer compare to other high dielectric constant materials in terms of performance and cost-effectiveness?

The article does not provide a direct comparison with other high dielectric constant materials, leaving the reader to wonder about the specific advantages of using zirconium-containing dielectric layers.

What are the specific display applications where this technology would be most beneficial, and how does it compare to existing solutions in those applications?

The article mentions display applications in general, but does not delve into specific use cases or compare the technology to existing solutions in those particular applications.

Original Abstract Submitted

Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.