18544468. PLASMA PROCESSING APPARATUS AND CLEANING METHOD simplified abstract (Tokyo Electron Limited)
Contents
- 1 PLASMA PROCESSING APPARATUS AND CLEANING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLASMA PROCESSING APPARATUS AND CLEANING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the switching mechanism operate in the chamber described in the patent application?
- 1.11 What are the specific parameters controlled by the controller in the described chamber?
- 1.12 Original Abstract Submitted
PLASMA PROCESSING APPARATUS AND CLEANING METHOD
Organization Name
Inventor(s)
Kazuki Tsuchiya of Miyagi (JP)
PLASMA PROCESSING APPARATUS AND CLEANING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18544468 titled 'PLASMA PROCESSING APPARATUS AND CLEANING METHOD
Simplified Explanation
The chamber described in the patent application is equipped with a stage for holding a substrate and an exhaust port connected to an exhaust system. A baffle surrounds the stage, dividing the chamber into a processing space where plasma processing occurs on the substrate and an exhaust space connected to the exhaust port. A switching mechanism can switch the baffle between a shield state, where it blocks the plasma, and a transmissive state, where it allows the plasma to pass through. The controller controls the switching mechanism to change the baffle's state as needed.
- The chamber includes a stage for holding a substrate and an exhaust port for removing gases.
- A baffle surrounds the stage, separating the chamber into processing and exhaust spaces.
- The baffle can switch between shielding the plasma and allowing it to pass through.
- The controller manages the baffle's state to control plasma exposure on the substrate.
Potential Applications
This technology could be used in plasma processing systems for semiconductor manufacturing, surface treatment, and thin film deposition.
Problems Solved
This innovation helps control plasma exposure during processing, leading to more precise and efficient treatments on substrates.
Benefits
The ability to switch the baffle between shielding and transmissive states provides flexibility and control in plasma processing applications.
Potential Commercial Applications
This technology could be valuable in industries such as electronics, optics, and materials science for enhancing the quality and performance of products.
Possible Prior Art
One possible prior art could be the use of fixed baffles in plasma processing chambers to control plasma distribution and substrate exposure.
Unanswered Questions
How does the switching mechanism operate in the chamber described in the patent application?
The patent application does not provide detailed information on the specific mechanism used for switching the baffle between shield and transmissive states. Further details on the design and operation of this mechanism would be helpful for a complete understanding of the technology.
What are the specific parameters controlled by the controller in the described chamber?
The patent application mentions that the controller controls the switching mechanism for the baffle, but it does not specify the exact parameters or variables that the controller manages. Understanding the specific functions and settings controlled by the controller would be essential for implementing and optimizing this technology in practical applications.
Original Abstract Submitted
The chamber is internally provided with a stage on which a substrate is disposed, and an exhaust port connected to an exhaust system around the stage. The baffle is provided around the stage, and divides a space in the chamber into a processing space where plasma processing is performed on the substrate, and an exhaust space connected to the exhaust port. The switching mechanism switches the baffle between a shield state in which the baffle shields a plasma and a transmissive state in which the baffle allows a plasma to pass therethrough. The controller controls the switching mechanism to switch the baffle from the shield state to the transmissive state or from the transmissive state to the shield state.
