18542779. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Jae Man Yoon of Gyeonggi-do (KR)
Jin Hwan Jeon of Gyeonggi-do (KR)
Tae Kyun Kim of Gyeonggi-do (KR)
Jung Woo Park of Gyeonggi-do (KR)
Su Ock Chung of Gyeonggi-do (KR)
Jae Won Ha of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18542779 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract features an active region with flat surfaces and hole-shaped recess portions, upper-level plugs, a spacer providing a trench exposing the hole-shaped recess portions, a lower-level plug filling the hole-shaped recess portions, and a buried conductive line partially filling the trench.
- Active region with flat surfaces and hole-shaped recess portions
- Upper-level plugs over the flat surfaces
- Spacer providing a trench exposing the hole-shaped recess portions
- Lower-level plug filling the hole-shaped recess portions
- Buried conductive line partially filling the trench
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as integrated circuits, microprocessors, and memory devices.
Problems Solved
This technology addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the layout and structure of the active region, plugs, spacer, and buried conductive line.
Benefits
The benefits of this technology include enhanced device performance, increased functionality, improved reliability, and potentially reduced power consumption in semiconductor devices.
Potential Commercial Applications
The technology described in this patent application could have commercial applications in the semiconductor industry for the development of next-generation electronic devices with higher performance and efficiency.
Possible Prior Art
One possible prior art for this technology could be the use of similar structures and configurations in previous semiconductor devices to improve device performance and functionality.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing semiconductor device structures in terms of performance and efficiency. Further research or testing may be needed to evaluate the advantages of this technology over existing solutions.
What are the potential challenges or limitations of implementing this technology in mass production of semiconductor devices?
This article does not address the potential challenges or limitations of implementing this technology in mass production of semiconductor devices. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that are not covered in this article.
Original Abstract Submitted
A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.
