18542615. MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
Contents
- 1 MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
Weiliang Jing of Shanghai (CN)
Kailiang Huang of Shenzhen (CN)
MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18542615 titled 'MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
Simplified Explanation
The memory described in the patent application consists of storage units with transistors and capacitors connected to them. The transistors have specific components arranged in a certain way to optimize their functionality.
- The storage units in the memory consist of transistors and capacitors.
- Each transistor includes a gate, semiconductor layer, first electrode, second electrode, and gate dielectric layer.
- The first electrode and second electrode are positioned in a specific direction, with the gate located between them.
- The semiconductor layer is connected separately to the first electrode and second electrode.
- The gate and semiconductor layer are isolated from each other by the gate dielectric layer.
- The second direction is parallel to the substrate on which the memory is formed.
Potential Applications
This technology could be applied in various electronic devices such as computers, smartphones, and tablets to enhance memory storage capabilities.
Problems Solved
This technology solves the problem of limited memory storage capacity by providing a more efficient and compact memory design.
Benefits
The benefits of this technology include increased memory storage capacity, improved data processing speed, and enhanced overall performance of electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include the manufacturing of high-capacity memory chips for consumer electronics, data centers, and other industries requiring advanced memory solutions.
Possible Prior Art
One possible prior art for this technology could be the development of similar memory structures with transistors and capacitors in the semiconductor industry.
Unanswered Questions
How does this technology compare to existing memory technologies in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and existing memory technologies in terms of speed and efficiency. Further research and testing would be needed to determine the performance differences.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges in implementing this technology on a large scale for commercial production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could pose challenges that need to be explored further.
Original Abstract Submitted
A memory comprises a substrate and a plurality of storage units formed on the substrate. Each of the storage units includes a transistor and a capacitor electrically connected to the transistor. The transistor includes a gate, a semiconductor layer, a first electrode, a second electrode, and a gate dielectric layer. The first electrode and the second electrode are arranged in a first direction. The gate is located between the first electrode and the second electrode. The semiconductor layer is located on one of two opposite sides of the gate in a second direction. The semiconductor layer is electrically connected separately to the first electrode and the second electrode, the gate and the semiconductor layer are isolated from each other by the gate dielectric layer, and the second direction is a direction parallel to the substrate.
