18541932. LIGHT DETECTOR simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)

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LIGHT DETECTOR

Organization Name

Panasonic Intellectual Property Management Co., Ltd.

Inventor(s)

Tatsuya Kabe of Osaka (JP)

Hideyuki Arai of Osaka (JP)

Hisashi Aikawa of Osaka (JP)

Yuki Sugiura of Osaka (JP)

Akito Inoue of Osaka (JP)

Mitsuyoshi Mori of Kyoto (JP)

Kentaro Nakanishi of Nara (JP)

Yusuke Sakata of Osaka (JP)

LIGHT DETECTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18541932 titled 'LIGHT DETECTOR

Simplified Explanation

The abstract describes a patent application for a light detector with APDs on a p-type semiconductor substrate, including a light receiving portion, a peripheral portion, a back electrode, and a first separation portion.

  • Light detector with APDs on a p-type semiconductor substrate
  • Light receiving portion with APDs and peripheral portion on first principal surface
  • Back electrode on second principal surface
  • First separation portion between light receiving and peripheral portions
  • APD with n-type region and p-epitaxial layer on first principal surface side
  • Peripheral portion with n-type MISFET at p-well and n-well surrounding side and bottom portions of p-well

Potential Applications

The technology could be applied in:

  • Optical communication systems
  • Medical imaging devices
  • Automotive safety systems

Problems Solved

The technology helps in:

  • Improving light detection sensitivity
  • Enhancing signal-to-noise ratio
  • Increasing overall efficiency of light detection systems

Benefits

The benefits of this technology include:

  • Higher accuracy in light detection
  • Lower power consumption
  • Compact design for easy integration into various devices

Potential Commercial Applications

The technology could find commercial applications in:

  • Security cameras
  • Biometric authentication systems
  • Industrial automation sensors

Possible Prior Art

One possible prior art could be the use of APDs in light detection systems, but the specific configuration described in this patent application may be novel and inventive.

Unanswered Questions

How does the presence of the p-type semiconductor substrate impact the performance of the light detector?

The abstract mentions the use of a p-type semiconductor substrate, but it does not elaborate on how this choice affects the overall functionality of the light detector.

What are the specific advantages of having a first separation portion between the light receiving portion and the peripheral portion?

While the abstract mentions the presence of a first separation portion, it does not explain the specific benefits or advantages of having this feature in the design of the light detector.


Original Abstract Submitted

A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.