18538358. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Jin Won Ma of Hwaseong-si (KR)
Ja Min Koo of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18538358 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a substrate with an element separation film and an active region, a bit line structure, a trench in the element separation film and active region, a single crystal storage contact filling the trench, and an information storage element connected to the single crystal storage contact.
- Substrate with element separation film and active region
- Bit line structure on the substrate
- Trench in element separation film and active region
- Single crystal storage contact filling the trench
- Information storage element connected to the single crystal storage contact
Potential Applications
The technology described in this patent application could be applied in:
- High-speed memory devices
- Data storage systems
- Semiconductor manufacturing
Problems Solved
This technology helps address the following issues:
- Improving memory storage capacity
- Enhancing data transfer speeds
- Increasing efficiency in semiconductor devices
Benefits
The benefits of this technology include:
- Higher performance in memory devices
- Improved reliability in data storage
- Enhanced overall functionality of semiconductor devices
Potential Commercial Applications
With its capabilities, this technology could be utilized in various commercial applications such as:
- Consumer electronics
- Telecommunications equipment
- Industrial automation systems
Possible Prior Art
One possible prior art in semiconductor memory devices is the use of trench structures for storage contacts, but the specific configuration and design described in this patent application may be novel and innovative.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory devices in terms of speed and efficiency. Further research or testing may be needed to determine the exact performance benefits of this technology.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes. Factors such as cost, scalability, and compatibility with existing manufacturing equipment could be significant considerations that need to be explored further.
Original Abstract Submitted
A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.
