18537896. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Woo Kyung You of Hwaseong-si (KR)
Han Seong Kim of Suwon-si (KR)
Jang Ho Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18537896 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple layers and films to achieve specific functionalities. Here is a simplified explanation of the patent application:
- The device consists of a first interlayer insulating film.
- Within the first interlayer insulating film, there is a conductive pattern.
- A resistance pattern is placed on top of the conductive pattern.
- An upper etching stopper film, made of a first metal, is positioned above the resistance pattern.
- A lower etching stopper film, made of a second metal, is located on the conductive pattern.
- A second interlayer insulating film covers the upper and lower etching stopper films.
- Potential Applications
This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications, such as microprocessors, memory chips, and sensors.
- Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing precise etching control and insulation between different layers.
- Benefits
The benefits of this technology include enhanced device functionality, increased efficiency, and improved overall performance of semiconductor devices.
- Potential Commercial Applications
The technology can be applied in the semiconductor industry for the production of high-quality integrated circuits, leading to advancements in electronics, telecommunications, and computing.
- Possible Prior Art
Prior art in semiconductor device manufacturing may include similar methods of etching control and insulation techniques used in the fabrication of integrated circuits.
- Unanswered Questions
- How does this technology compare to existing semiconductor manufacturing processes?
This article does not provide a direct comparison with existing semiconductor manufacturing processes, leaving room for further analysis and evaluation of the technology's advantages over current methods.
- What are the specific electronic devices that can benefit the most from this technology?
While the potential applications are mentioned broadly, a more detailed exploration of the specific electronic devices that can benefit the most from this technology is not provided in the article.
Original Abstract Submitted
A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.
