View source for 18535829. DISPLAY APPARATUS HAVING A SUBSTRATE HOLE simplified abstract (LG Display Co., Ltd.)

=DISPLAY APPARATUS HAVING A SUBSTRATE HOLE=


==Organization Name==

[[:Category:LG Display Co., Ltd.|LG Display Co., Ltd.]]


[[Category:LG Display Co., Ltd.]]

==Inventor(s)==

[[:Category:Dong-Il Chu of Gimpo-si (KR)|Dong-Il Chu of Gimpo-si (KR)]][[Category:Dong-Il Chu of Gimpo-si (KR)]]

[[:Category:Min-Joo Kim of Seoul (KR)|Min-Joo Kim of Seoul (KR)]][[Category:Min-Joo Kim of Seoul (KR)]]

[[:Category:Jae-Won Lee of Goyang-si (KR)|Jae-Won Lee of Goyang-si (KR)]][[Category:Jae-Won Lee of Goyang-si (KR)]]

[[:Category:Sang-Hoon Pak of Seoul (KR)|Sang-Hoon Pak of Seoul (KR)]][[Category:Sang-Hoon Pak of Seoul (KR)]]

[[:Category:Sang-Hyuk Won of Gimpo-si (KR)|Sang-Hyuk Won of Gimpo-si (KR)]][[Category:Sang-Hyuk Won of Gimpo-si (KR)]]

[[:Category:Seung-Hyun Youk of Paju-si (KR)|Seung-Hyun Youk of Paju-si (KR)]][[Category:Seung-Hyun Youk of Paju-si (KR)]]

[[:Category:Seon-Hee Lee of Incheon (KR)|Seon-Hee Lee of Incheon (KR)]][[Category:Seon-Hee Lee of Incheon (KR)]]

==DISPLAY APPARATUS HAVING A SUBSTRATE HOLE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18535829 titled 'DISPLAY APPARATUS HAVING A SUBSTRATE HOLE

==Simplified Explanation==

The display apparatus described in the patent application includes a substrate with a penetrating area and a separating area, as well as various layers and structures for thin film transistors and insulating films.

* The display apparatus includes a substrate with a penetrating area and a separating area.
* The apparatus features a first buffer layer with a first-buffer lower layer and a first-buffer upper layer.
* A first thin film transistor is included, with a first semiconductor pattern, a first gate electrode, and a first source and drain electrode.
* The separating structure includes a first separation layer, a second separation layer, and a third separation layer.

== Potential Applications ==
The technology described in this patent application could be applied in the development of high-resolution displays for electronic devices, such as smartphones, tablets, and televisions.

== Problems Solved ==
This technology solves the problem of improving the performance and durability of thin film transistors in display devices by incorporating a separating structure that enhances the overall functionality of the apparatus.

== Benefits ==
The benefits of this technology include enhanced display quality, increased device longevity, and improved overall performance of electronic devices utilizing this display apparatus.

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in the consumer electronics industry, specifically in the manufacturing of high-quality displays for various electronic devices.

== Possible Prior Art ==
One possible prior art for this technology could be the development of similar separating structures in display devices to improve performance and durability. 

=== Unanswered Questions ===

== How does this technology compare to existing display apparatus in terms of performance and durability? ==
The article does not provide a direct comparison between this technology and existing display apparatus in terms of performance and durability. 

== What are the specific manufacturing processes involved in creating this display apparatus? ==
The article does not detail the specific manufacturing processes involved in creating this display apparatus.


==Original Abstract Submitted==

A display apparatus can include a substrate having a penetrating area and a separating area, the penetrating area including a substrate hole, a first buffer layer having a first-buffer lower layer, and a first-buffer upper layer, a first thin film transistor including a first semiconductor pattern, a first gate electrode, and a first source electrode and a first drain electrode, a first interlayer insulating film; a second interlayer insulating film, an opening extending through the second interlayer insulating film, the first interlayer insulating film, the first gate insulating film and the first-buffer upper layer, and a separation structure in the opening, the separation structure including a first separation layer having a same stacked structure as the first-buffer upper layer, a second separation layer having a same stacked structure as the first gate insulating film, and a third separation layer having a same stacked structure as the first gate electrode.



[[Category:H01L27/15]]
[[Category:H01L29/786]]
[[Category:H01L33/12]]
[[Category:H01L33/38]]
[[Category:H01L33/62]]