18535829. DISPLAY APPARATUS HAVING A SUBSTRATE HOLE simplified abstract (LG Display Co., Ltd.)
Contents
- 1 DISPLAY APPARATUS HAVING A SUBSTRATE HOLE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DISPLAY APPARATUS HAVING A SUBSTRATE HOLE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing display apparatus in terms of performance and durability?
- 1.11 What are the specific manufacturing processes involved in creating this display apparatus?
- 1.12 Original Abstract Submitted
DISPLAY APPARATUS HAVING A SUBSTRATE HOLE
Organization Name
Inventor(s)
Sang-Hyuk Won of Gimpo-si (KR)
Seung-Hyun Youk of Paju-si (KR)
DISPLAY APPARATUS HAVING A SUBSTRATE HOLE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18535829 titled 'DISPLAY APPARATUS HAVING A SUBSTRATE HOLE
Simplified Explanation
The display apparatus described in the patent application includes a substrate with a penetrating area and a separating area, as well as various layers and structures for thin film transistors and insulating films.
- The display apparatus includes a substrate with a penetrating area and a separating area.
- The apparatus features a first buffer layer with a first-buffer lower layer and a first-buffer upper layer.
- A first thin film transistor is included, with a first semiconductor pattern, a first gate electrode, and a first source and drain electrode.
- The separating structure includes a first separation layer, a second separation layer, and a third separation layer.
Potential Applications
The technology described in this patent application could be applied in the development of high-resolution displays for electronic devices, such as smartphones, tablets, and televisions.
Problems Solved
This technology solves the problem of improving the performance and durability of thin film transistors in display devices by incorporating a separating structure that enhances the overall functionality of the apparatus.
Benefits
The benefits of this technology include enhanced display quality, increased device longevity, and improved overall performance of electronic devices utilizing this display apparatus.
Potential Commercial Applications
The potential commercial applications of this technology could be in the consumer electronics industry, specifically in the manufacturing of high-quality displays for various electronic devices.
Possible Prior Art
One possible prior art for this technology could be the development of similar separating structures in display devices to improve performance and durability.
Unanswered Questions
How does this technology compare to existing display apparatus in terms of performance and durability?
The article does not provide a direct comparison between this technology and existing display apparatus in terms of performance and durability.
What are the specific manufacturing processes involved in creating this display apparatus?
The article does not detail the specific manufacturing processes involved in creating this display apparatus.
Original Abstract Submitted
A display apparatus can include a substrate having a penetrating area and a separating area, the penetrating area including a substrate hole, a first buffer layer having a first-buffer lower layer, and a first-buffer upper layer, a first thin film transistor including a first semiconductor pattern, a first gate electrode, and a first source electrode and a first drain electrode, a first interlayer insulating film; a second interlayer insulating film, an opening extending through the second interlayer insulating film, the first interlayer insulating film, the first gate insulating film and the first-buffer upper layer, and a separation structure in the opening, the separation structure including a first separation layer having a same stacked structure as the first-buffer upper layer, a second separation layer having a same stacked structure as the first gate insulating film, and a third separation layer having a same stacked structure as the first gate electrode.
