18529731. SELECT GATE TRANSISTOR WITH SEGMENTED CHANNEL FIN simplified abstract (Micron Technology, Inc.)

SELECT GATE TRANSISTOR WITH SEGMENTED CHANNEL FIN

Organization Name

Micron Technology, Inc.

Inventor(s)

Darwin A. Clampitt of Wilder ID (US)

Albert Fayrushin of Boise ID (US)

Matthew J. King of Boise ID (US)

Madison D. Drake of Boise ID (US)

SELECT GATE TRANSISTOR WITH SEGMENTED CHANNEL FIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18529731 titled 'SELECT GATE TRANSISTOR WITH SEGMENTED CHANNEL FIN

Simplified Explanation

The patent application describes memory devices designed to enhance gate-induced-drain-leakage (GIDL) current during memory erase operations by improving the electric field in the channel structures of select gate transistors to strings of memory cells. Here are some key points to explain the innovation:

• Memory devices designed to enhance GIDL current during memory erase operations
• Improved electric field in the channel structures of select gate transistors
• Channel structures implemented as segmented portion for drains and portion opposite a gate
• Segmented portion includes fins and non-conductive regions extending vertically
• Variations of border region for the portion opposite the gate
• Select gate transistors formed using a single photo mask process

1. 1. 1. Potential Applications

- Memory devices - Semiconductor industry - Data storage

1. 1. 1. Problems Solved

- Enhancing GIDL current during memory erase operations - Improving electric field in channel structures - Simplifying manufacturing process with single photo mask process

1. 1. 1. Benefits

- Increased efficiency in memory erase operations - Enhanced performance of memory devices - Cost-effective manufacturing process

1. 1. 1. Potential Commercial Applications
         1. Enhanced Memory Devices for Improved Performance

1. 1. 1. Possible Prior Art

- Previous methods of enhancing GIDL current during memory erase operations - Different approaches to improving electric field in channel structures

1. 1. 1. 1. Unanswered Questions
         2. How does this innovation compare to existing memory device technologies?

This article does not provide a direct comparison to existing memory device technologies, leaving the reader to wonder about the specific advantages of this innovation over current solutions.

1. 1. 1. 1. What are the potential limitations or challenges in implementing this technology on a larger scale?

The article does not address any potential limitations or challenges in implementing this technology on a larger scale, leaving room for uncertainty regarding scalability and practicality.

Original Abstract Submitted

A variety of applications can include memory devices designed to provide enhanced gate-induced-drain-leakage (GIDL) current during memory erase operations. The enhanced operation can be provided by enhancing the electric field in the channel structures of select gate transistors to strings of memory cells. The channel structures can be implemented as a segmented portion for drains and a portion opposite a gate. The segmented portion includes one or more fins and one or more non-conductive regions with both fins and non-conductive regions extending vertically from the portion opposite the gate. Variations of a border region for the portion opposite the gate with the segmented portion can include fanged regions extending from the fins into the portion opposite the gate or rounded border regions below the non-conductive regions. Such select gate transistors can be formed using a single photo mask process. Additional devices, systems, and methods are discussed.