18526987. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Hyeoung-won Seo of Yongin-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526987 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a gate trench, gate structure, gate dielectric film, and insulating barrier film to improve device performance and reliability.
- The device has a substrate with active regions and a device isolation region for electrical isolation.
- The gate trench extends across the active regions and device isolation region.
- The gate structure is formed in the gate trench along the sidewalls of the active regions.
- A gate dielectric film is present between the gate trench and gate structure in each active region.
- An insulating barrier film is provided under the gate trench in each active region, spaced apart from the lower surface of the gate trench.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.
Problems Solved
This technology solves the problem of improving device performance and reliability by enhancing gate control and reducing leakage currents in semiconductor devices.
Benefits
The benefits of this technology include increased device efficiency, reduced power consumption, and improved overall device reliability and lifespan.
Potential Commercial Applications
Potential commercial applications of this technology include the production of faster and more energy-efficient electronic devices for various industries, including telecommunications, computing, and automotive.
Possible Prior Art
One possible prior art for this technology could be the use of similar gate structures and dielectric films in semiconductor devices to improve performance and reliability.
Unanswered Questions
How does this technology compare to existing methods for improving semiconductor device performance?
This article does not provide a direct comparison to existing methods or technologies in the semiconductor industry.
What are the specific performance metrics or benchmarks achieved with this technology?
The article does not mention specific performance metrics or benchmarks achieved with the described semiconductor device.
Original Abstract Submitted
A semiconductor device includes a substrate comprising a plurality of active regions extending in a first direction and a device isolation region electrically isolating the plurality of active regions, a gate trench extending across the plurality of active regions and the device isolation region, a gate structure extending in the gate trench of each of and along opposite sidewalls of the plurality of active regions, a gate dielectric film formed between the gate trench and the gate structure in each of the plurality of active regions, and an insulating barrier film provided in each of the plurality of active regions under the gate trench spaced apart from a lower surface of the gate trench and extending in an extension direction of the gate trench.
