18526663. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Hung-Chang Sun of Kaohsiung City (TW)
Kuo Chang Chiang of Hsinchu (TW)
Sheng-Chih Lai of Hsinchu (TW)
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526663 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
Simplified Explanation
The method described in the abstract involves forming a 3D memory device by creating a layer stack with alternating layers of conductive and dielectric materials, forming trenches in the layer stack, lining the trenches with a memory film, adding a channel material over the memory film, filling the trenches with a dielectric material, forming memory cell isolation regions, and crystallizing portions of the channel material.
- Formation of layer stack with alternating conductive and dielectric materials
- Creation of trenches in the layer stack
- Lining of trenches with memory film
- Addition of channel material over memory film
- Filling of trenches with dielectric material
- Formation of memory cell isolation regions
- Crystallization of portions of the channel material
Potential Applications
The technology described in the patent application could be applied in the development of high-density and high-performance 3D memory devices for various electronic devices such as smartphones, tablets, and computers.
Problems Solved
This technology addresses the need for increased memory storage capacity and improved performance in electronic devices by providing a method for forming 3D memory devices with enhanced memory cell isolation and crystallization capabilities.
Benefits
The benefits of this technology include higher memory density, faster data access speeds, improved energy efficiency, and overall enhanced performance of electronic devices utilizing 3D memory technology.
Potential Commercial Applications
- "Innovative Method for Forming 3D Memory Devices" - Optimizing SEO for commercial applications of the technology in the semiconductor industry.
Possible Prior Art
There may be prior art related to methods for forming 3D memory devices using similar materials and processes, but specific examples are not provided in the abstract.
Unanswered Questions
How does the crystallization process impact the overall performance of the memory device?
The abstract mentions crystallizing portions of the channel material, but it does not elaborate on how this process affects the functionality and efficiency of the memory device.
What are the specific characteristics of the memory film used in lining the trenches?
While the abstract mentions lining the trenches with a memory film, it does not provide details on the composition or properties of this specific material.
Original Abstract Submitted
A method of forming a three-dimensional (3D) memory device includes: forming, over a substrate, a layer stack having alternating layers of a first conductive material and a first dielectric material; forming trenches extending vertically through the layer stack from an upper surface of the layer stack distal from the substrate to a lower surface of the layer stack facing the substrate; lining sidewalls and bottoms of the trenches with a memory film; forming a channel material over the memory film, the channel material including an amorphous material; filling the trenches with a second dielectric material after forming the channel material; forming memory cell isolation regions in the second dielectric material; forming source lines (SLs) and bit lines (BLs) that extend vertically in the second dielectric material on opposing sides of the memory cell isolation regions; and crystallizing first portions of the channel material after forming the SLs and BLs.
