18526497. TSV TESTING simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
- 1 TSV TESTING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TSV TESTING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
TSV TESTING
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Lee D. Whetsel of Parker TX (US)
TSV TESTING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526497 titled 'TSV TESTING
Simplified Explanation
The integrated circuit die described in the patent application includes a substrate with an opening through it, a through silicon via (TSV) with a conductive body in the opening, and a scan cell with various inputs and outputs.
- The integrated circuit die has a substrate made of semiconductor material.
- The substrate has a top surface, a bottom surface, and an opening between the two surfaces.
- A through silicon via (TSV) is present in the opening.
- The TSV has a conductive body, a top contact point at the top surface, and a bottom contact point at the bottom surface.
- A scan cell is included in the integrated circuit die.
- The scan cell has a serial input, a serial output, control inputs, a voltage reference input, a response input connected to one of the contact points, and a stimulus output connected to the other contact point.
Potential Applications
This technology could be used in:
- High-performance computing systems
- Advanced communication devices
- Automotive electronics
Problems Solved
- Improved signal transmission between different layers of the integrated circuit
- Enhanced testing and debugging capabilities
Benefits
- Higher efficiency in data processing
- Increased reliability in circuit operation
- Simplified testing procedures
Potential Commercial Applications
Optimized for:
- Data centers
- Telecommunications industry
- Automotive sector
Possible Prior Art
Prior art may include:
- Existing through silicon via technologies
- Scan cell designs in integrated circuits
Unanswered Questions
How does this technology impact power consumption in the integrated circuit?
The patent application does not provide information on the power efficiency of the integrated circuit die.
Are there any limitations to the size or complexity of the integrated circuit that can incorporate this technology?
The patent application does not address any potential limitations regarding the size or complexity of the integrated circuit die.
Original Abstract Submitted
An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (TSV) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom contact point coupled to the body at the bottom surface. A scan cell has a serial input, a serial output, control inputs, a voltage reference input, a response input coupled to one of the contact points, and a stimulus output coupled to the other one of the contact points.
