18525652. MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)

MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS

Organization Name

Micron Technology, Inc.

Inventor(s)

Yoshiaki Fukuzumi of Yokohama (JP)

Jun Fujiki of Tokyo (JP)

Matthew J. King of Boise ID (US)

Sidhartha Gupta of Boise ID (US)

Paolo Tessariol of Arcore (IT)

Kunal Shrotri of Boise ID (US)

Kye Hyun Baek of Boise ID (US)

Kyle A. Ritter of Boise ID (US)

Shuji Tanaka of Tokyo (JP)

Umberto Maria Meotto of Dietlikon (CH)

Richard J. Hill of Boise ID (US)

Matthew Holland of Victor NY (US)

MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18525652 titled 'MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS

Simplified Explanation

The microelectronic device described in the abstract is a complex structure comprising multiple tiers of conductive and insulative structures, with strings of memory cells extending vertically through the stack structure. Additional stack structures with pillars and slot structures are also present in the device.

• The microelectronic device comprises a stack structure with alternating conductive and insulative structures arranged in tiers.
• Strings of memory cells vertically extend through the stack structure, with each string comprising a channel material.
• An additional stack structure overlies the stack structure, with pillars and slot structures dividing the block structures.
• First pillars horizontally offset from the center of memory cell strings, while second pillars vertically overlie the memory cells.
• Additional slot structures sub-divide the block structures and neighbor the first pillars.

Potential Applications

The technology described in this patent application could be applied in:

• Memory devices
• Data storage systems
• High-performance computing

Problems Solved

This technology helps in:

• Increasing memory density
• Enhancing data storage capabilities
• Improving overall performance of microelectronic devices

Benefits

The benefits of this technology include:

• Higher memory capacity
• Faster data processing speeds
• Improved efficiency in electronic systems

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Semiconductor industry
• Data centers
• Consumer electronics market

Possible Prior Art

One possible prior art for this technology could be the use of stacked memory structures in microelectronic devices to increase memory capacity and performance.

How does this technology compare to existing memory storage solutions in terms of speed and efficiency?

This article does not provide a direct comparison with existing memory storage solutions in terms of speed and efficiency. Further research or testing may be needed to determine the exact performance benefits of this technology.

What are the potential challenges or limitations of implementing this technology on a large scale?

The article does not address the potential challenges or limitations of implementing this technology on a large scale. Factors such as cost, scalability, and manufacturing processes could impact the widespread adoption of this innovation.

Original Abstract Submitted

A microelectronic device comprises a stack structure comprising a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures separated from one another by slot structures, strings of memory cells vertically extending through the block structures of the stack structure, the strings of memory cells individually comprising a channel material vertically extending through the stack structure, an additional stack structure vertically overlying the stack structure and comprising a vertical sequence of additional conductive structures and additional insulative structures arranged in additional tiers, first pillars extending through the additional stack structure and vertically overlying the strings of memory cells, each of the first pillars horizontally offset from a center of a corresponding string of memory cells, second pillars extending through the additional stack structure and vertically overlying the strings of memory cells, and additional slot structures comprising a dielectric material extending through at least a portion of the additional stack structure and sub-dividing each of the block structures into sub-block structures, the additional slot structures horizontally neighboring the first pillars. Related microelectronic devices, electronic systems, and methods are also described.