18525597. METHODS OF FORMING ELECTRONIC DEVICES INCLUDING RECESSED CONDUCTIVE STRUCTURES AND RELATED SYSTEMS simplified abstract (Micron Technology, Inc.)
Contents
- 1 METHODS OF FORMING ELECTRONIC DEVICES INCLUDING RECESSED CONDUCTIVE STRUCTURES AND RELATED SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHODS OF FORMING ELECTRONIC DEVICES INCLUDING RECESSED CONDUCTIVE STRUCTURES AND RELATED SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing stack structures in terms of performance and reliability?
- 1.11 What are the potential limitations or challenges in implementing this technology in practical electronic devices?
- 1.12 Original Abstract Submitted
METHODS OF FORMING ELECTRONIC DEVICES INCLUDING RECESSED CONDUCTIVE STRUCTURES AND RELATED SYSTEMS
Organization Name
Inventor(s)
Sidhartha Gupta of Boise ID (US)
Anilkumar Chandolu of Boise ID (US)
S M Istiaque Hossain of Boise ID (US)
METHODS OF FORMING ELECTRONIC DEVICES INCLUDING RECESSED CONDUCTIVE STRUCTURES AND RELATED SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525597 titled 'METHODS OF FORMING ELECTRONIC DEVICES INCLUDING RECESSED CONDUCTIVE STRUCTURES AND RELATED SYSTEMS
Simplified Explanation
The electronic device described in the patent application comprises a stack structure with alternating insulative and conductive structures, pillars extending through the stack, and a barrier material covering the stack. The device also includes insulative materials extending through the barrier and into the stack, with some insulative material in vertical alignment with the barrier.
- Stack structure with alternating insulative and conductive structures
- Pillars extending through the stack
- Barrier material covering the stack
- Insulative materials extending through the barrier and into the stack
- Insulative material in vertical alignment with the barrier
Potential Applications
The technology described in the patent application could be applied in various electronic devices such as smartphones, tablets, and wearables. It could also be used in sensors, medical devices, and communication equipment.
Problems Solved
This technology helps in improving the performance and reliability of electronic devices by providing better insulation and protection for the conductive structures within the stack. It also helps in reducing interference and enhancing signal transmission.
Benefits
The benefits of this technology include increased durability, improved signal quality, and enhanced overall performance of electronic devices. It also allows for more compact and efficient designs.
Potential Commercial Applications
- "Innovative Stack Structure for Electronic Devices: Enhancing Performance and Reliability"
Possible Prior Art
One possible prior art for this technology could be the use of similar stack structures in semiconductor devices or memory modules. These may have different configurations or materials but share some similarities with the described invention.
Unanswered Questions
How does this technology compare to existing stack structures in terms of performance and reliability?
The article does not provide a direct comparison with existing stack structures in terms of performance and reliability. Further research or testing may be needed to evaluate the advantages of this technology over current solutions.
What are the potential limitations or challenges in implementing this technology in practical electronic devices?
The article does not address potential limitations or challenges in implementing this technology in practical electronic devices. Factors such as cost, manufacturing complexity, and compatibility with existing systems could be important considerations that need to be explored further.
Original Abstract Submitted
An electronic device comprises a stack structure comprising vertically alternating insulative structures and conductive structures arranged in tiers, pillars extending vertically through the stack structure, and a barrier material overlying the stack structure. The electronic device comprises a first insulative material extending through the barrier material and into an upper tier portion of the stack structure, and a second insulative material laterally adjacent to the first insulative material and laterally adjacent to at least some of the conductive structures in the upper tier portion of the stack structure. At least a portion of the second insulative material is in vertical alignment with the barrier material. Additional electronic devices and related methods and systems are also disclosed.
