18525467. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to other methods of improving signal integrity in stacked die configurations?
- 1.11 What are the potential challenges in implementing this technology on a large scale in commercial electronic devices?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525467 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
Simplified Explanation
The semiconductor structure described in the patent application involves a unique configuration of stacked dies with conductive structures that are not overlapped between adjacent layers. This design allows for improved performance and efficiency in electronic devices.
- Stacked semiconductor dies with conductive structures
- Conductive structures not overlapped between adjacent layers
- Enhanced performance and efficiency in electronic devices
Potential Applications
The technology described in this patent application could be applied in various electronic devices such as smartphones, tablets, laptops, and other consumer electronics. It could also be used in industrial applications where high-performance semiconductor structures are required.
Problems Solved
This technology solves the problem of signal interference and inefficiencies that can occur in traditional stacked die configurations where conductive structures overlap between layers. By ensuring that the conductive structures do not overlap, the semiconductor structure can operate more effectively and reliably.
Benefits
The benefits of this technology include improved signal integrity, reduced power consumption, and increased overall performance of electronic devices. Additionally, the unique design of the stacked dies with non-overlapping conductive structures allows for more efficient heat dissipation and better thermal management.
Potential Commercial Applications
The technology described in this patent application has potential commercial applications in the semiconductor industry, particularly in the development of high-performance electronic devices. Companies involved in the manufacturing of smartphones, tablets, laptops, and other consumer electronics could benefit from implementing this innovative semiconductor structure in their products.
Possible Prior Art
One possible prior art that may be related to this technology is the use of through-silicon vias (TSVs) in stacked die configurations. TSVs are vertical interconnects that pass through the silicon substrate to connect different layers of a semiconductor structure. While TSVs serve a similar purpose of connecting stacked dies, the non-overlapping conductive structures described in this patent application offer a unique approach to improving signal integrity and efficiency.
Unanswered Questions
How does this technology compare to other methods of improving signal integrity in stacked die configurations?
The article does not provide a direct comparison between this technology and other methods of improving signal integrity in stacked die configurations. Further research and analysis would be needed to determine the specific advantages and disadvantages of this technology compared to alternative approaches.
What are the potential challenges in implementing this technology on a large scale in commercial electronic devices?
The article does not address the potential challenges in implementing this technology on a large scale in commercial electronic devices. Factors such as manufacturing costs, scalability, and compatibility with existing production processes could present obstacles to widespread adoption of this semiconductor structure. Further investigation would be necessary to assess these challenges and develop strategies to overcome them.
Original Abstract Submitted
A semiconductor structure includes a plurality of dies. The plurality of dies are stacked sequentially along a first direction. The first direction is a direction perpendicular to a plane of the dies. Each of the dies includes a base and n first conductive structures penetrating the base along the first direction, where n is greater than or equal to 2. In at least one group of the corresponding first conductive structures in the dies, projections of the group of the first conductive structures in two adjacent layers of the dies along the first direction are not overlapped with each other.
