18525187. INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing methods for fabricating integrated circuits?
- 1.11 What are the specific performance improvements achieved by this technology?
- 1.12 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
Chulkwon Park of Hwaseong-si (KR)
Sunghee Han of Hwaseong-si (KR)
Yoosang Hwang of Yongin-si (KR)
INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525187 titled 'INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME
Simplified Explanation
The integrated circuit device described in the patent application includes a word line trench with a lower portion and an upper portion, a word line extending in the trench, a gate insulation layer between the word line and the trench sidewalls, an electrically insulating gate capping layer in the upper portion of the trench, and an insulation liner between the gate capping layer and the trench sidewalls.
- The device includes a word line trench with different widths in the lower and upper portions.
- A gate insulation layer separates the word line from the trench sidewalls.
- An electrically insulating gate capping layer is provided in the upper portion of the trench.
- An insulation liner is placed between the gate capping layer and the trench sidewalls.
Potential Applications
This technology could be applied in the manufacturing of advanced integrated circuits, particularly in the development of high-performance memory devices.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by providing better control over the flow of electric current within the device.
Benefits
The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in integrated circuit devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the production of next-generation memory chips for various electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar trench structures in the fabrication of semiconductor devices to improve their performance and efficiency.
Unanswered Questions
How does this technology compare to existing methods for fabricating integrated circuits?
This article does not provide a direct comparison between this technology and existing methods for fabricating integrated circuits. It would be helpful to understand the specific advantages and disadvantages of this approach in relation to traditional techniques.
What are the specific performance improvements achieved by this technology?
The article mentions that this technology can enhance the performance of integrated circuits, but it does not provide specific details on the magnitude of these improvements. It would be beneficial to know the quantitative impact of implementing this innovation on the speed, power consumption, and other key performance metrics of integrated circuits.
Original Abstract Submitted
An integrated circuit device includes a substrate having an active region and a word line trench therein. The word line trench includes a lower portion having a first width, and an upper portion, which extends between the lower portion and a surface of the substrate and has a second width that is greater than the first width. A word line is provided, which extends in and adjacent a bottom of the word line trench. A gate insulation layer is provided, which extends between the word line and sidewalls of the lower portion of the word line trench. An electrically insulating gate capping layer is provided in the upper portion of the word line trench. An insulation liner is provided, which extends between the gate capping layer and sidewalls of the upper portion of the word line trench. The gate insulation layer extends between the insulation liner and a portion of the gate capping layer, which extends within the upper portion of the word line trench.
