18524668. INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hidehiro Fujiwara of Hsinchu (TW)
Tze-Chiang Huang of Hsinchu (TW)
Hong-Chen Cheng of Hsinchu (TW)
Jonathan Tsung-Yung Chang of Hsinchu (TW)
INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524668 titled 'INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME
Simplified Explanation
The abstract describes an integrated circuit (IC) die with rows of through-silicon vias (TSVs) and memory macros that are electrically isolated from each other.
- The IC die includes three adjacent rows of TSVs and two adjacent rows of memory macros.
- TSVs in the first row extend through and are isolated from memory macros in the first row.
- TSVs in the third row extend through and are isolated from memory macros in the second row.
Potential Applications
This technology could be applied in:
- High-performance computing
- Data centers
- Networking equipment
Problems Solved
This technology helps in:
- Improving signal integrity
- Reducing power consumption
- Enhancing overall performance of the IC die
Benefits
The benefits of this technology include:
- Enhanced reliability
- Increased data transfer speeds
- Better integration of TSVs and memory macros
Potential Commercial Applications
This technology could be used in:
- Server processors
- Graphics processing units (GPUs)
- Artificial intelligence (AI) chips
Possible Prior Art
One possible prior art could be the integration of TSVs in IC dies for improved performance and efficiency.
Unanswered Questions
How does this technology impact the overall cost of manufacturing IC dies?
The article does not discuss the cost implications of implementing this technology.
Are there any limitations to the number of TSVs and memory macros that can be integrated using this approach?
The article does not address any potential limitations in the number of TSVs and memory macros that can be integrated on the IC die.
Original Abstract Submitted
An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hidehiro Fujiwara of Hsinchu (TW)
- Tze-Chiang Huang of Hsinchu (TW)
- Hong-Chen Cheng of Hsinchu (TW)
- Yen-Huei Chen of Hsinchu (TW)
- Hung-Jen Liao of Hsinchu (TW)
- Jonathan Tsung-Yung Chang of Hsinchu (TW)
- Yun-Han Lee of Hsinchu (TW)
- Lee-Chung Lu of Hsinchu (TW)
- H01L23/48
- G11C11/418
- H01L21/768
- H10B10/00