18524668. INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Hidehiro Fujiwara of Hsinchu (TW)

Tze-Chiang Huang of Hsinchu (TW)

Hong-Chen Cheng of Hsinchu (TW)

Yen-Huei Chen of Hsinchu (TW)

Hung-Jen Liao of Hsinchu (TW)

Jonathan Tsung-Yung Chang of Hsinchu (TW)

Yun-Han Lee of Hsinchu (TW)

Lee-Chung Lu of Hsinchu (TW)

INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18524668 titled 'INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME

Simplified Explanation

The abstract describes an integrated circuit (IC) die with rows of through-silicon vias (TSVs) and memory macros that are electrically isolated from each other.

• The IC die includes three adjacent rows of TSVs and two adjacent rows of memory macros.
• TSVs in the first row extend through and are isolated from memory macros in the first row.
• TSVs in the third row extend through and are isolated from memory macros in the second row.

Potential Applications

This technology could be applied in:

• High-performance computing
• Data centers
• Networking equipment

Problems Solved

This technology helps in:

• Improving signal integrity
• Reducing power consumption
• Enhancing overall performance of the IC die

Benefits

The benefits of this technology include:

• Enhanced reliability
• Increased data transfer speeds
• Better integration of TSVs and memory macros

Potential Commercial Applications

This technology could be used in:

• Server processors
• Graphics processing units (GPUs)
• Artificial intelligence (AI) chips

Possible Prior Art

One possible prior art could be the integration of TSVs in IC dies for improved performance and efficiency.

Unanswered Questions

How does this technology impact the overall cost of manufacturing IC dies?

The article does not discuss the cost implications of implementing this technology.

Are there any limitations to the number of TSVs and memory macros that can be integrated using this approach?

The article does not address any potential limitations in the number of TSVs and memory macros that can be integrated on the IC die.

Original Abstract Submitted

An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.