18524627. FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sheng-Chih Lai of Hsinchu County (TW)
Chung-Te Lin of Tainan City (TW)
FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524627 titled 'FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME
Simplified Explanation
The memory device described in the abstract includes a unique stack structure with silicide layers and an oxide layer, as well as a gate structure and dielectric layers.
- The memory device includes a bottom dielectric layer, a gate structure, a stack structure, and a dielectric layer.
- The stack structure consists of a first silicide layer, a second silicide layer, an oxide layer, a channel region, and an isolation layer.
- The first and second silicide layers contain cobalt, titanium, tungsten, or palladium.
Potential Applications
This memory device technology could be applied in:
- Semiconductor manufacturing
- Data storage devices
- High-performance computing systems
Problems Solved
This technology addresses issues such as:
- Improving memory device performance
- Enhancing data storage capacity
- Increasing data processing speed
Benefits
The benefits of this technology include:
- Higher memory device efficiency
- Improved data access speeds
- Enhanced overall system performance
Potential Commercial Applications
This technology could be utilized in:
- Memory chip manufacturing
- Consumer electronics
- Cloud computing infrastructure
Possible Prior Art
One possible prior art for this technology could be the use of different materials in memory device stack structures, such as silicon or germanium.
Unanswered Questions
How does this memory device technology compare to existing memory devices in terms of speed and capacity?
This article does not provide a direct comparison with existing memory devices in terms of speed and capacity.
What are the potential challenges in implementing this memory device technology on a large scale?
The article does not address the potential challenges in implementing this memory device technology on a large scale.
Original Abstract Submitted
Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending bet ween the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.
