18524552. THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract (SanDisk Technologies LLC)
Contents
- 1 THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing methods for forming memory stack structures?
- 1.11 What are the potential challenges in implementing this technology on a large scale in manufacturing processes?
- 1.12 Original Abstract Submitted
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
Shunsuke Takuma of Yokkaichi (JP)
Seiji Shimabukuro of Yokkaichi (JP)
Tatsuya Hinoue of Yokkaichi (JP)
Kengo Kajiwara of Yokkaichi (JP)
Akihiro Tobioka of Yokkaichi (JP)
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524552 titled 'THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a method for forming memory stack structures using vertically alternating layers of insulating and sacrificial material, with backside support pillar structures and backside trenches to provide structural support and division of the layers. The sacrificial material layers are replaced with electrically conductive layers to create the memory stack structures.
- Vertically alternating layers of insulating and sacrificial material are formed over a substrate.
- Rows of backside support pillar structures are formed through the layers.
- Memory stack structures are formed through the layers.
- A two-dimensional array of discrete backside trenches is formed.
- Combinations of backside trenches and backside support pillar structures divide the layers into alternating stacks.
- Sacrificial material layers are replaced with electrically conductive layers.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of memory devices, such as non-volatile memory chips used in electronic devices.
Problems Solved
This technology solves the problem of efficiently forming memory stack structures with structural support and division of layers, allowing for improved performance and reliability of memory devices.
Benefits
The benefits of this technology include enhanced structural integrity of memory stack structures, increased efficiency in manufacturing processes, and improved overall performance of memory devices.
Potential Commercial Applications
"Memory Stack Structure Formation Method for Improved Performance" could be used in the production of various memory devices, including solid-state drives, smartphones, tablets, and other electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of sacrificial layers in semiconductor manufacturing processes to create complex structures with improved functionality.
Unanswered Questions
How does this technology compare to existing methods for forming memory stack structures?
This technology offers a more efficient and reliable way to create memory stack structures compared to traditional methods, but further research is needed to determine the exact advantages and limitations.
What are the potential challenges in implementing this technology on a large scale in manufacturing processes?
One potential challenge could be the scalability of the process and the cost-effectiveness of replacing sacrificial material layers with electrically conductive layers. Further studies and testing are required to address these challenges.
Original Abstract Submitted
At least one vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate. Rows of backside support pillar structures are formed through the at least one vertically alternating sequence. Memory stack structures are formed through the at least one vertically alternating sequence. A two-dimensional array of discrete backside trenches is formed through the at least one vertically alternating sequence. Contiguous combinations of a subset of the backside trenches and a subset of the backside support pillar structures divide the at least one vertically alternating sequence into alternating stacks of insulating layers and sacrificial material layers. The sacrificial material layers are replaced with electrically conductive layers while the backside support pillar structures provide structural support to the insulating layers.
