18523494. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Kioxia Corporation)

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Kioxia Corporation

Inventor(s)

Tomoya Sanuki of Yokkaichi (JP)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18523494 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes a first substrate with control circuits, memory cell arrays, and pads in different regions, all interconnected by connection lines.

  • The semiconductor device consists of a first substrate with distinct regions for control circuits, memory cell arrays, and pads.
  • The memory cell arrays are positioned above the control circuits in their respective regions and are connected to them.
  • Pads are located above the memory cell arrays and are connected to the control circuits.
  • A connection line runs above the memory cell arrays, connecting the pads in the different regions.

Potential Applications

This technology could be applied in:

  • Memory devices
  • Integrated circuits
  • Semiconductor manufacturing

Problems Solved

This technology helps in:

  • Improving memory cell array organization
  • Enhancing connectivity between different components on a semiconductor device

Benefits

The benefits of this technology include:

  • Increased efficiency in data storage and retrieval
  • Enhanced performance of semiconductor devices
  • Improved overall functionality of integrated circuits

Potential Commercial Applications

A potential commercial application for this technology could be in:

  • Consumer electronics
  • Computer hardware
  • Telecommunications equipment

Possible Prior Art

One possible prior art for this technology could be:

  • Memory devices with separate control circuits and memory cell arrays on a substrate.

Unanswered Questions

How does this technology impact power consumption in semiconductor devices?

This article does not delve into the specific effects of this technology on power usage in semiconductor devices.

What are the potential limitations of implementing this technology in large-scale production?

The article does not address the challenges or constraints that may arise when scaling up the production of semiconductor devices using this technology.


Original Abstract Submitted

In one embodiment, a semiconductor device includes a first substrate including first and second regions on its surface, a first control circuit on the first substrate in the first region, a first memory cell array above the first control circuit in the first region and connected to the first control circuit, and a first pad above the first memory cell array in the first region and connected to the first control circuit. The device further includes a second control circuit on the first substrate in the second region, a second memory cell array above the second control circuit in the second region and connected to the second control circuit, a second pad above the second memory cell array in the second region and connected to the second control circuit, and a connection line above the first and second memory cell arrays and connecting the first and second pads.