18523054. IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS simplified abstract (SONY GROUP CORPORATION)
Contents
- 1 IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS
Organization Name
Inventor(s)
Akira Furukawa of Kanagawa (JP)
Yoshihiro Ando of Kanagawa (JP)
Hideaki Togashi of Kanagawa (JP)
Fumihiko Koga of Kanagawa (JP)
IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18523054 titled 'IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS
Simplified Explanation
The imaging element described in the abstract includes a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion unit also includes a charge storage electrode, which is spaced apart from the first electrode and positioned opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is made up of multiple segments, each consisting of a charge storage electrode segment, an insulating layer segment, and a photoelectric conversion layer segment. The thickness of the insulating layer segment gradually changes from one segment to another as the number of segments increases.
- The imaging element consists of a photoelectric conversion unit with multiple segments, each containing a charge storage electrode, an insulating layer, and a photoelectric conversion layer.
- The thickness of the insulating layer segment changes gradually as the number of segments increases, affecting the distance of the segment from the first electrode.
Potential Applications
This technology could be applied in:
- Digital cameras
- Medical imaging devices
- Security cameras
Problems Solved
This technology helps in:
- Improving image quality
- Enhancing light sensitivity
- Reducing noise in images
Benefits
The benefits of this technology include:
- Higher quality images
- Improved performance in low light conditions
- Enhanced overall image processing capabilities
Potential Commercial Applications
Potential commercial applications of this technology include:
- Camera manufacturing companies
- Medical imaging equipment manufacturers
- Security system providers
Possible Prior Art
One possible prior art for this technology could be the use of stacked photoelectric conversion units in imaging sensors, but the specific design with multiple segments and changing insulating layer thickness may be unique to this patent application.
Unanswered Questions
How does this technology compare to existing imaging sensor designs in terms of performance and cost?
This article does not provide a direct comparison with existing imaging sensor designs in terms of performance and cost. It would be beneficial to understand how this technology stacks up against current solutions in the market.
What are the potential challenges in manufacturing this type of imaging element at scale?
The article does not address the potential challenges in manufacturing this type of imaging element at scale. It would be important to consider factors such as production complexity, cost implications, and scalability issues in the manufacturing process.
Original Abstract Submitted
Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nphotoelectric conversion unit segment is formed of an ncharge storage electrode segment, an ninsulating layer segment and an nphotoelectric conversion layer segment. As n increases, the nphotoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nphotoelectric conversion unit segment.
