18522622. SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ming-Da Cheng of Taoyuan City (TW)
Wei-Hung Lin of Xinfeng Township (TW)
Hui-Min Huang of Taoyuan City (TW)
Chang-Jung Hsueh of Taipei City (TW)
Po-Hao Tsai of Taoyuan City (TW)
Yung-Sheng Lin of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522622 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS
Simplified Explanation
The semiconductor device structure described in the abstract includes an interconnection structure, a conductive pillar with a protruding portion, upper and lower conductive vias, and electrical connections between the components.
- The semiconductor device structure includes an interconnection structure over a semiconductor substrate.
- A conductive pillar with a protruding portion extends towards the semiconductor substrate.
- An upper conductive via connects the conductive pillar and the interconnection structure.
- A lower conductive via is connected to the conductive pillar through the upper conductive via.
- The conductive pillar extends across opposite sidewalls of the upper and lower conductive vias.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as microprocessors, memory chips, and sensors.
Problems Solved
This technology helps improve the electrical connectivity and performance of semiconductor devices by providing a more efficient and reliable interconnection structure.
Benefits
The benefits of this technology include enhanced electrical conductivity, improved signal transmission, and increased device reliability.
Potential Commercial Applications
Potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and telecommunications.
Possible Prior Art
One possible prior art for this technology could be the use of conductive pillars in semiconductor packaging to improve electrical connections and signal integrity.
Unanswered Questions
How does this technology impact the overall performance of semiconductor devices?
This technology can potentially improve the speed, efficiency, and reliability of semiconductor devices by enhancing their electrical connectivity and signal transmission capabilities.
What are the potential cost implications of implementing this technology in semiconductor manufacturing processes?
The cost implications of implementing this technology may vary depending on factors such as materials, manufacturing processes, and scalability. Further research and analysis are needed to determine the exact cost implications of adopting this technology in semiconductor manufacturing.
Original Abstract Submitted
A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.
