18521459. SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
Contents
- 1 SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
Hong-Shyang Wu of Taipei City (TW)
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521459 titled 'SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
Simplified Explanation
The semiconductor structure described in the patent application includes a substrate, a gate structure, source and drain regions with a first type of conductivity, and a dielectric layer with two portions, one on the gate structure and the other extending to a portion of the drain region with at least one recess.
- The semiconductor structure includes a substrate, gate structure, source and drain regions, and a dielectric layer with two portions.
- The source and drain regions have a first type of conductivity.
- The dielectric layer has at least one recess on the portion extending to the drain region.
Potential Applications
This semiconductor structure could be used in various electronic devices such as transistors, integrated circuits, and other semiconductor components.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by reducing leakage currents and enhancing overall device reliability.
Benefits
The semiconductor structure offers improved electrical performance, reduced power consumption, and increased device longevity compared to traditional structures.
Potential Commercial Applications
This technology could be applied in the manufacturing of advanced electronic devices, leading to more efficient and reliable products in industries such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of similar dielectric layers in semiconductor structures to improve device performance and reliability.
Unanswered Questions
How does this semiconductor structure compare to existing technologies in terms of performance and efficiency?
This article does not provide a direct comparison with existing technologies to evaluate the performance and efficiency improvements offered by this semiconductor structure.
What are the specific manufacturing processes involved in fabricating this semiconductor structure?
The article does not detail the specific manufacturing processes or techniques used to fabricate this semiconductor structure, which could be crucial information for understanding its practical implementation.
Original Abstract Submitted
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a gate structure formed on the substrate; a source region and a drain region formed in the substrate on either side of the gate structure, the source region and the drain region both having a first type of conductivity; and a dielectric layer having a first portion and a second portion, wherein the first portion of the dielectric layer is formed on a portion of the gate structure, and the second portion of the dielectric layer is formed on the substrate and extending to a portion of the drain region, wherein the dielectric layer includes at least one recess on the second portion. An associated fabricating method is also disclosed.
