18519750. Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device simplified abstract (Kokusai Electric Corporation)
Contents
- 1 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technique compare to existing sputtering suppression methods in terms of cost-effectiveness and performance?
- 1.11 What are the specific materials and manufacturing processes required to implement this technology in a substrate processing apparatus?
- 1.12 Original Abstract Submitted
Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device
Organization Name
Inventor(s)
Katsunori Funaki of Toyama (JP)
Yasutoshi Tsubota of Toyama (JP)
Koichiro Harada of Toyama (JP)
Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519750 titled 'Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device
Simplified Explanation
The patent application describes a technique to suppress sputtering on an inner peripheral surface of a process vessel during plasma-excited processes.
- A substrate processing apparatus includes a process vessel with a process chamber for plasma excitation, a gas supplier for supplying process gas, a coil around the outer peripheral surface of the vessel with high frequency power supply, and an electrostatic shield between the coil and the outer surface with a partition and opening for separation.
Potential Applications
- Semiconductor manufacturing
- Thin film deposition processes
Problems Solved
- Sputtering on inner peripheral surfaces during plasma processes
- Contamination of substrates due to sputtering
Benefits
- Improved process efficiency
- Reduced maintenance costs
- Enhanced product quality
Potential Commercial Applications
- Improving Plasma Processing Efficiency in Semiconductor Manufacturing
Possible Prior Art
No prior art is known at this time.
Unanswered Questions
How does this technique compare to existing sputtering suppression methods in terms of cost-effectiveness and performance?
The article does not provide a direct comparison with existing methods, leaving uncertainty about the relative advantages of this technique.
What are the specific materials and manufacturing processes required to implement this technology in a substrate processing apparatus?
The article does not detail the specific materials or processes needed for implementation, leaving a gap in practical application knowledge.
Original Abstract Submitted
Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.
