18518004. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seungwoo Do of Yongin-si, (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518004 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with different regions and various channel structures, gate electrodes, and source/drain patterns.
- The device features vertically stacked first channel patterns on the first region of the substrate.
- A second channel structure with a second channel pattern is located on the second region.
- The third region contains third and fourth channel patterns made of different semiconductor materials.
- Gate electrodes are present on each channel structure, and source/drain patterns are on opposite sides of the channel structures.
Potential Applications
This technology could be applied in:
- Advanced electronic devices
- Semiconductor manufacturing industry
- High-performance computing systems
Problems Solved
This innovation addresses issues such as:
- Enhancing semiconductor device performance
- Increasing efficiency in electronic circuits
- Improving integration of different semiconductor materials
Benefits
The benefits of this technology include:
- Higher device performance
- Enhanced functionality in electronic devices
- Improved manufacturing processes for semiconductors
Original Abstract Submitted
A semiconductor device including a substrate that includes first to third regions; a first channel structure on the first region and including first channel patterns that are vertically stacked on the substrate; a second channel structure on the second region and including a second channel pattern on the substrate; a third channel structure on the third region and including third channel patterns and fourth channel patterns that are vertically and alternately stacked on the substrate; first to third gate electrodes on the first to third channel structures; and first to third source/drain patterns on opposite sides of the first to third channel structures, wherein the first, second, and fourth channel patterns include a first semiconductor material, and the third channel patterns include a second semiconductor material different from the first semiconductor material.
