18517635. TECHNIQUES FOR CORRECTION OF ABERRATIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
TECHNIQUES FOR CORRECTION OF ABERRATIONS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Min-Cheng Wu of Taitung County (TW)
Ching-Ju Huang of Tainan City (TW)
TECHNIQUES FOR CORRECTION OF ABERRATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517635 titled 'TECHNIQUES FOR CORRECTION OF ABERRATIONS
Simplified Explanation
The patent application describes an exposure tool with a reticle deformation detector that can adjust components of the tool based on reticle deformation information during the scanning process for scanning multiple fields of a wafer.
- The exposure tool includes a reticle deformation detector.
- One or more processors obtain reticle deformation information during the scanning process.
- The processors determine the deformation of the reticle at multiple times.
- Based on the deformation of the reticle, adjustments are made to components of the exposure tool during the scanning process.
Potential Applications
- Semiconductor manufacturing
- Lithography processes
Problems Solved
- Ensuring accurate and precise scanning of multiple fields on a wafer
- Minimizing errors due to reticle deformation
Benefits
- Improved accuracy in semiconductor manufacturing
- Enhanced quality control in lithography processes
- Increased efficiency in wafer scanning operations
Original Abstract Submitted
Some implementations described herein provide an exposure tool. The exposure tool includes a reticle deformation detector and one or more processors configured to obtain, via the reticle deformation detector, reticle deformation information associated with a reticle during a scanning process for scanning multiple fields of a wafer. The one or more processors determine, based on the reticle deformation information, a deformation of the reticle at multiple times during the scanning process, and perform, based on the deformation of the reticle at the multiple times, one or more adjustments of one or more components of the exposure tool during the scanning process.
