18517457. SEMICONDUCTOR SUBSTRATE BONDING TOOL AND METHODS OF OPERATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR SUBSTRATE BONDING TOOL AND METHODS OF OPERATION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yen-Hao Huang of Hsinchu City (TW)
Chun-Yi Chen of Hsinchu City (TW)
Yin-Tun Chou of Hsinchu City (TW)
Yuan-Hsin Chi of Longjing Township (TW)
Sheng-Yuan Lin of Hsinchu (TW)
SEMICONDUCTOR SUBSTRATE BONDING TOOL AND METHODS OF OPERATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517457 titled 'SEMICONDUCTOR SUBSTRATE BONDING TOOL AND METHODS OF OPERATION
Simplified Explanation
The bonding tool described in the patent application ensures a consistent pressure in the gas supply line to prevent premature contact between semiconductor substrates during bonding.
- Gas supply line connects directly between valves of gas supply tanks and processing chamber
- No intervening valves or structures to cause pressure buildup
- Pressure in gas supply line maintained near pressure in processing chamber
- Prevents pressure imbalance in processing chamber during bonding process
Potential Applications
- Semiconductor manufacturing
- Microelectronics assembly
- MEMS fabrication
Problems Solved
- Prevents premature contact between semiconductor substrates
- Ensures uniform pressure during bonding process
Benefits
- Improved bonding process
- Consistent quality of bonded products
- Increased efficiency in semiconductor manufacturing
Original Abstract Submitted
A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.
