18517298. MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chih-Liang Chen of Hsinchu (TW)
Shang-Syuan Ciou of Hsinchu (TW)
Hui-Zhong Zhuang of Hsinchu (TW)
Ching-Wei Tsai of Hsinchu (TW)
Shang-Wen Chang of Hsinchu (TW)
MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517298 titled 'MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE
Simplified Explanation
The abstract describes a method of making a semiconductor device involving manufacturing a transistor, depositing a spacer material, recessing the spacer material, and creating electrical connections and a self-aligned interconnect structure.
- Manufacturing a first transistor over a first side of a substrate
- Depositing a spacer material against a sidewall of the first transistor
- Recessing the spacer material to expose a first portion of the sidewall of the first transistor
- Manufacturing a first electrical connection to the transistor, with a portion contacting the surface of the transistor and another portion contacting the exposed sidewall
- Creating a self-aligned interconnect structure (SIS) extending along the spacer material, with a portion separated from the transistor by the spacer material and directly contacted by the first electrical connection
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enabling precise and reliable electrical connections and interconnect structures.
Benefits
- Enhanced electrical connectivity - Improved device performance - Increased efficiency in semiconductor manufacturing processes
Potential Commercial Applications
The technology could be utilized in the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of spacer materials in semiconductor device manufacturing processes to create self-aligned structures and improve electrical connections.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing techniques?
This article does not provide a direct comparison between this method and traditional techniques in terms of efficiency, cost, or performance improvements.
What specific types of semiconductor devices can benefit the most from this technology?
The article does not specify which types of semiconductor devices would see the most significant improvements from the implementation of this method.
Original Abstract Submitted
A method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. The method further includes depositing a spacer material against a sidewall of the first transistor. The method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. The method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. The method further includes manufacturing a self-aligned interconnect structure (SIS) extending along the spacer material, wherein the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.
