18515220. PLASMA MONITORING SYSTEM, PLASMA MONITORING METHOD, AND MONITORING DEVICE simplified abstract (TOKYO ELECTRON LIMITED)
Contents
- 1 PLASMA MONITORING SYSTEM, PLASMA MONITORING METHOD, AND MONITORING DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLASMA MONITORING SYSTEM, PLASMA MONITORING METHOD, AND MONITORING DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PLASMA MONITORING SYSTEM, PLASMA MONITORING METHOD, AND MONITORING DEVICE
Organization Name
Inventor(s)
Satoru Teruuchi of Kurokawa-gun (JP)
Jun Hirose of Kurokawa-gun (JP)
Kazuya Nagaseki of Kurokawa-gun (JP)
Shinji Himori of Kurokawa-gun (JP)
PLASMA MONITORING SYSTEM, PLASMA MONITORING METHOD, AND MONITORING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18515220 titled 'PLASMA MONITORING SYSTEM, PLASMA MONITORING METHOD, AND MONITORING DEVICE
Simplified Explanation
The abstract describes a plasma monitoring system consisting of a monitoring device and a control device. The monitoring device is placed on a stage in a plasma processing apparatus and includes a base substrate with multiple spectroscopes facing upward to acquire light emission intensities of the plasma. The control device collects light emission intensity distribution data of the plasma based on the data acquired by the spectroscopes.
- The monitoring device includes a plate-shaped base substrate and multiple spectroscopes.
- Spectroscopes have optical axes facing upward and are spaced apart to capture light emission intensities of the plasma.
- The control device gathers light emission intensity distribution data of the plasma in the processing apparatus using data from the spectroscopes.
Potential Applications
This technology can be applied in industries such as semiconductor manufacturing, plasma etching, and material processing where monitoring and controlling plasma processes are crucial.
Problems Solved
1. Ensures accurate monitoring of plasma processes. 2. Facilitates real-time adjustments and control of plasma parameters.
Benefits
1. Enhanced process efficiency and quality. 2. Reduced downtime and maintenance costs. 3. Improved product yield and consistency.
Potential Commercial Applications
Optimizing plasma processes in semiconductor fabrication, plasma cleaning systems, and surface modification technologies.
Possible Prior Art
One possible prior art could be the use of spectroscopy in plasma monitoring systems. Previous patents or publications may exist on similar technologies for monitoring plasma processes.
Unanswered Questions
How does the monitoring device communicate with the control device?
The abstract does not specify the method of communication between the monitoring device and the control device. It would be essential to understand the data transfer process for effective implementation.
What is the accuracy and reliability of the data acquired by the spectroscopes?
The abstract does not mention the accuracy or reliability of the data acquired by the spectroscopes. Understanding the precision of the monitoring system is crucial for its practical application.
Original Abstract Submitted
A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.
