18514974. NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING simplified abstract (Intel Corporation)
Contents
- 1 NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Unanswered Questions
- 1.10 Original Abstract Submitted
NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING
Organization Name
Inventor(s)
Erica J. Thompson of Beaverton OR (US)
Aditya Kasukurti of Hillsboro OR (US)
Jun Sung Kang of Portland OR (US)
Kai Loon Cheong of Beaverton OR (US)
Biswajeet Guha of Hillsboro OR (US)
William Hsu of Hillsboro OR (US)
Bruce Beattie of Portland OR (US)
NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18514974 titled 'NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING
Simplified Explanation
The patent application describes a nanowire device with unique cross-sectional shapes at different portions of the nanowire, as well as integrated circuits including the nanowire device and a method of cleaning a semiconductor structure.
- The nanowire device includes one or more nanowires with different cross-sectional shapes at the end portions.
- A first conductive structure is in contact with the first end portion, and a second conductive structure is in contact with the second end portion.
- The body portion of the nanowire has a first cross-sectional shape, while the first end portion has a second cross-sectional shape different from the first shape.
Potential Applications
The technology described in the patent application could be applied in the following areas:
- Nanoelectronics
- Sensing devices
- Semiconductor manufacturing
Problems Solved
The nanowire device addresses the following issues:
- Enhancing electrical conductivity
- Improving device performance
- Facilitating cleaning of semiconductor structures
Benefits
The technology offers the following benefits:
- Increased efficiency in electronic devices
- Enhanced sensitivity in sensors
- Simplified cleaning processes in semiconductor manufacturing
Potential Commercial Applications
- "Nanowire Device for Enhanced Conductivity and Cleaning in Semiconductor Manufacturing"
Unanswered Questions
How does the nanowire device impact the overall size of integrated circuits?
The patent application does not provide information on the potential impact of the nanowire device on the size of integrated circuits.
What materials are used in the fabrication of the nanowire device?
The patent application does not specify the materials used in the fabrication of the nanowire device.
Original Abstract Submitted
A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.
