18514466. ELECTROPLATED INDIUM BUMP STACKS FOR CRYOGENIC ELECTRONICS simplified abstract (MICROSOFT TECHNOLOGY LICENSING, LLC)
Contents
- 1 ELECTROPLATED INDIUM BUMP STACKS FOR CRYOGENIC ELECTRONICS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ELECTROPLATED INDIUM BUMP STACKS FOR CRYOGENIC ELECTRONICS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ELECTROPLATED INDIUM BUMP STACKS FOR CRYOGENIC ELECTRONICS
Organization Name
MICROSOFT TECHNOLOGY LICENSING, LLC
Inventor(s)
Christopher Cantaloube of Boca Raton FL (US)
Richard P. Rouse of Kirkland CA (US)
ELECTROPLATED INDIUM BUMP STACKS FOR CRYOGENIC ELECTRONICS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18514466 titled 'ELECTROPLATED INDIUM BUMP STACKS FOR CRYOGENIC ELECTRONICS
Simplified Explanation
The cryogenic under bump metallization (UBM) stack described in the patent application includes a conductive pillar with a sufficient thickness to prevent intermetallic regions from forming and compromising the structural integrity of the stack. An indium superconducting solder bump is placed on the conductive pillar, which is made of copper with adhesion and barrier layers of titanium tungsten and copper or titanium.
- The conductive pillar in the UBM stack functions as a solder wetting layer and is designed to prevent intermetallic regions from extending through its entire thickness.
- The indium superconducting solder bump is formed through electroplating, with the conductive pillar made of copper and the adhesion and barrier layers consisting of titanium tungsten and copper or titanium.
- The UBM stack eliminates the need for magnetic materials like nickel, making it suitable for cryogenic applications.
Potential Applications
The technology described in the patent application could be applied in cryogenic systems, superconducting devices, and other high-performance electronic applications.
Problems Solved
This technology solves the issue of intermetallic regions forming in the conductive pillar of UBM stacks, which can compromise the structural integrity of the stack.
Benefits
The benefits of this technology include improved reliability and performance of electronic devices operating in cryogenic environments, as well as the elimination of magnetic materials like nickel from the UBM stack.
Potential Commercial Applications
Potential commercial applications of this technology include superconducting quantum computers, high-speed data processing systems, and advanced communication devices.
Possible Prior Art
One possible prior art for this technology could be the use of different materials or configurations in UBM stacks to prevent intermetallic region formation at cryogenic temperatures.
Unanswered Questions
How does the thickness of the conductive pillar affect the performance of the UBM stack in cryogenic applications?
The thickness of the conductive pillar is crucial in preventing intermetallic regions from forming and extending through the entire pillar. However, the optimal thickness for different applications and environments may vary.
What are the potential challenges in scaling up the production of UBM stacks with this technology for commercial applications?
Scaling up production may involve challenges such as maintaining consistency in the thickness of the conductive pillar, ensuring the quality of the solder bumps, and optimizing the manufacturing process for mass production.
Original Abstract Submitted
A cryogenic under bump metallization (UBM) stack includes an adhesion and barrier layer and a conductive pillar on the adhesion and barrier layer. The conductive pillar functions as a solder wetting layer of the UBM stack and has a thickness. An indium superconducting solder bump is on the conductive pillar. The thickness of the conductive pillar is sufficient to prevent intermetallic regions, which form in the conductive pillar at room temperature due to interdiffusion, from extending through the entire thickness of the conductive pillar to maintain the structural integrity of the UBM stack. The indium (In) solder bump may be formed through electroplating, with the conductive pillar being copper (Cu) and the adhesion and barrier layer being titanium tungsten (TiW) and a thin seed layer of copper (Cu), or a layer of titanium (Ti). The UBM stack eliminates the need for magnetic materials such as nickel (Ni) in the stack, making the stack suitable for cryogenic applications.
