18513439. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18513439 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Simplified Explanation

The semiconductor device structure described in the patent application includes a first fin structure with a recess, a source/drain feature, and a gate structure in the recess.

• The first fin structure extends from a substrate in a first direction.
• The first recess in the top of the first fin structure has a tapering sidewall profile.
• The first gate structure is disposed in the first recess and extends in a second direction perpendicular to the first direction.
• The first gate structure has a gate dielectric layer with sidewall and bottom surfaces in contact with the recess.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by providing a unique structure that enhances control over the flow of electrical current, reducing power consumption and increasing speed.

Benefits

The benefits of this technology include higher performance, lower power consumption, increased speed, and improved overall functionality of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for the production of next-generation processors, memory chips, and other electronic components.

Possible Prior Art

One possible prior art could be the use of recessed gate structures in semiconductor devices to improve control over the flow of current and enhance device performance.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by the described technology.

What are the specific manufacturing processes involved in forming the unique structure of the semiconductor device described in the patent application?

The article does not detail the specific manufacturing processes or techniques used to create the semiconductor device structure with the first fin structure, recess, source/drain feature, and gate structure.

Original Abstract Submitted

A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first fin structure disposed at a first device region and extending from a substrate along a first direction, wherein the first fin structure comprises a first recess formed in a top of the first fin structure, the first recess having a bottom and a sidewall extending upwardly from the bottom, wherein the sidewall has a tapering profile. The structure also includes a first source/drain feature in contact with the first fin structure, and a first gate structure disposed in the first recess, the first gate structure extending along a second direction perpendicular to the first direction, wherein the first gate structure has a first gate dielectric layer, and the first gate dielectric layer has a sidewall surface and a bottom surface in contact with the sidewall and the bottom of the first recess, respectively.